Sb-doped SnO2 (ATO) transparent conducting films are fabricated using horizontal ultrasonic spray pyrolysis deposition (HUSPD) to form uniform and compact film structures with homogeneously supplied precursor solution. To optimize the molar concentration and transparent conducting performance of the ATO films using HUSPD, we use precursor solutions of 0.15, 0.20, 0.25, and 0.30 M. As the molar concentration increases, the resultant ATO films exhibit more compact surface structures because of the larger crystallite sizes and higher ATO crystallinity because of the greater thickness from the accelerated growth of ATO. Thus, the ATO films prepared at 0.25 M have the best transparent conducting performance (12.60±0.21 Ω/□ sheet resistance and 80.83% optical transmittance) and the highest figure-of-merit value (9.44±0.17 × 10-3 Ω-1). The improvement in transparent conducting performance is attributed to the enhanced carrier concentration by the improved ATO crystallinity and Hall mobility with the compact surface structure and preferred (211) orientation, ascribed to the accelerated growth of ATO at the optimized molar concentration. Therefore, ATO films fabricated using HUSPD are transparent conducting film candidates for optoelectronic devices.

Sb-doped SnO2(ATO) thin films were prepared using electrospinning. To investigate the optimum properties of the electrospun ATO thin films, the deposition numbers of the ATO nanofibers(NFs) were controlled to levels of 1, 2, 4, and 6. Together with the different levels of deposition number, the structural, chemical, morphological, electrical, and optical properties of the nanofibers were investigated. As the deposition number of the ATO NFs increased, the thickness of the ATO thin films increased and the film surfaces were gradually densified, which affected the electrical properties of the ATO thin films. 6 levels of the ATO thin film exhibited superior electrical properties due to the improved carrier concentration and Hall mobility resulting from the increased thickness and surface densification. Also, the thickness of the samples had an effect on the optical properties of the ATO thin films. The ATO thin films with 6 deposited levels displayed the lowest transmittance and highest haze. Therefore, the figure of merit(FOM) considering the electrical and optical properties showed the best value for ATO thin films with 4 deposited levels.

Solution-based Sb-doped SnO2 (ATO) transparent conductive oxides using a low-temperature process werefabricated by an electrospray technique followed by spin coating. We demonstrated their structural, chemical, morphological,electrical, and optical properties by means of X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanningelectron microscopy, atomic force microscopy, Hall effect measurement system, and UV-Vis spectrophotometry. In order toinvestigate optimum electrical and optical properties at low-temperature annealing, we systemically coated two layer, four layer,and six layers of ATO sol-solution using spin-coating on the electrosprayed ATO thin films. The resistivity and opticaltransmittance of the ATO thin films decreased as the thickness of ATO sol-layer increased. Then, the ATO thin films with twosol-layers exhibited superb figure of merit compared to the other samples. The performance improvement in a low temperatureprocess (300oC) can be explained by the effect of enhanced carrier concentration due to the improved densification of the ATOthin films causing the optimum sol-layer coating. Therefore, the solution-based ATO thin films prepared at 300oC exhibitedthe superb electrical (~7.25×10−3Ω·cm) and optical transmittance (~83.1%) performances.

플라즈마 화학증착법을 이용하여 Corning glass 1737 기판에 안티몬 도핑 산화주석 박막을 증착하였다. 플라즈만 화학증착시 반응변수에 따른 박막의 결정상 및 형성된 표면거칠기에 대하여 XRD와 AFM을 이용하여 검토하였다. 반응온도 450˚C, 유입가스비 R[PSbClPSnCl4]=1.12, r.f. power 30W에서 비교적 결정성이 뛰어난 박막을 얻을 수 있었다. 화학증착법(TCVD)에 비해 플라즈마 열화학증착법(PECVD)으로 얻은 박막의 표현형상이 보다 균일하였다. 안티몬 도핑농도가 증가할수록, 증착온고가 낮을수록, 증착두께가 작을수록 박막의 표면거칠기가 보다 감소하였다.

In this work, we prepared a heterojunction anode with a surface layer of SnO2-Sb-Ni (SSN) on a Ti/IrO2 electrode by thermal decomposition to improve the electrochemical activity of the Ti/IrO2 electrode. The Ti/IrO2-SSN electrode showed significantly improved electrochemical activity compared with Ti/IrO2. For the 0.1 M NaCl and 0.1 M Na2SO4 electrolytes, the onset potential of the Ti/IrO2-SSN electrode shifted in the positive direction by 0.1 VSCE and 0.4 VSCE, respectively. In 2.0-2.5 V voltages, the concentration in Ti/IrO2-SSN was 2.59-214.6 mg/L Cl2, and Ti/IrO2 was 0.55-49.21 mg/L Cl2. Moreover, the generation of the reactive chlorine species and degradation of Eosin-Y increased by 3.79-7.60 times and 1.06-2.15 times compared with that of Ti/IrO2. Among these voltages, the generation of the reactive chlorine species and degradation of Eosin-Y were the most improved at 2.25 V. Accordingly, in the Ti/IrO2-SSN electrode, it can be assumed that the competitive reaction between chlorine ion oxidation and water oxidation is minimized at an applied voltage of 2.25V.