최근 몇 년 동안 높은 감도, 빠른 응답 및 쉬운 제작 공정을 갖춘 습도 센서가 상당한 주목을 받고 있다. 여기서는 PET 기판의 깍지낀 전극(IDE)에 감지 층을 증착하여 길이 대 직경의 종횡비가 낮고 (PVP-ZnO-1), 높은(PVP-ZnO-2) PVP 개질 ZnO 나노막대 센서(PVP-ZnO)의 쉬운 제작 공정을 보고 한다. PVP-ZnO-2는 PVP-ZnO-1 센서(41,647%)에 비해 85% 상대 습도(RH)에서 99,397%의 더 높은 정전용량성 습도 감도를 보였다. PVP-ZnO-2 센서는 또한 순환 습도 조건에서 응답시간 7초 및 복구시간 10초를 나타냈다. PVP-ZnO-2의 높은 습도 감도 성능의 이점을 활용하여 다양한 호흡 정도의 정전용량 변화와 모스 부호 메시징을 시연하였다. 이 연구는 높은 표면적을 갖는 고성능 나노소재 기반 습도 센서의 엄청난 잠재력을 보여준다.

We report on the fabrication and photoelectrochemical(PEC) properties of a Cu2O thin film/ZnO nanorod array oxide p-n heterojunction structure with ZnO nanorods embedded in Cu2O thin film as an efficient photoelectrode for solardriven water splitting. A vertically oriented n-type ZnO nanorod array was first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type Cu2O thin film was directly electrodeposited onto the vertically oriented ZnO nanorods array to form an oxide semiconductor heterostructure. The crystalline phases and morphologies of the heterojunction materials were characterized using X-ray diffraction and scanning electron microscopy as well as Raman scattering. The PEC properties of the fabricated Cu2O/ZnO p-n heterojunction photoelectrode were evaluated by photocurrent conversion efficiency measurements under white light illumination. From the observed PEC current density versus voltage (J-V) behavior, the Cu2O/ZnO photoelectrode was found to exhibit a negligible dark current and high photocurrent density, e.g., 0.77 mA/cm2 at 0.5 V vs Hg/HgCl2 in a 1 mM Na2SO4 electrolyte, revealing an effective operation of the oxide heterostructure. In particular, a significant PEC performance was observed even at an applied bias of 0 V vs Hg/ HgCl2, which made the device self-powered. The observed PEC performance was attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential, including the light absorption and separation processes of photoinduced charge carriers.

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to 250 oC. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of 150 oC. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

Urchin-structured zinc oxide(ZnO) nanorod(NR) gas sensors were successfully demonstrated on a polyimide(PI) substrate, using single wall carbon nanotubes(SWCNTs) as the electrode. The ZnO NRs were grown with ZnO shells arranged at regular intervals to form a network structure with maximized surface area. The high surface area and numerous junctions of the NR network structure was the key to excellent gas sensing performance. Moreover, the SWCNTs formed a junction barrier with the ZnO which further improved sensor characteristics. The fabricated urchin-structured ZnO NR gas sensors exhibited superior performance upon NO2 exposure with a stable response of 110, fast rise and decay times of 38 and 24 sec, respectively. Comparative analyses revealed that the high performance of the sensors was due to a combination of high surface area, numerous active junction points, and the use of the SWCNTs electrode. Furthermore, the urchin-structured ZnO NR gas sensors showed sustainable mechanical stability. Although degradation of the devices progressed during repeated flexibility tests, the sensors were still operational even after 10000 cycles of a bending test with a radius of curvature of 5 mm.

As a growth-template of ZnO nanorods (NR), a hexagonal β-Ni(OH)2 nanosheet (NS) was synthesized with the low temperature hydrothermal process and its microstructure was investigated using a high resolution scanning electron microscope and transmission electron microscope. Zinc nitrate hexahydrate was hydrolyzed by hexamethylenetetramine with the same mole ratio and various temperatures, growth times and total concentrations. The optimum hydrothermal processing condition for the best crystallinity of hexagonal β-Ni(OH)2 NS was determined to be with 3.5 mM at 95˚C for 2 h. The prepared Ni(OH)2 NSs were two dimensionally arrayed on a substrate using an air-water interface tapping method, and the quality of the array was evaluated using an X-ray diffractometer. Because of the similarity of the lattice parameter of the (0001) plane between ZnO (wurzite a = 0.325 nm, c = 0.521 nm) and hexagonal β-Ni(OH)2 (brucite a = 0.313 nm, c = 0.461 nm) on the synthesized hexagonal β-Ni(OH)2 NS, ZnO NRs were successfully grown without seeds. At 35 mM of divalent Zn ion, the entire hexagonal β-Ni(OH)2 NSs were covered with ZnO NRs, and this result implies the possibility that ZnO NR can be grown epitaxially on hexagonal β-Ni(OH)2 NS by a soluble process. After the thermal annealing process, β-Ni(OH)2 changed into NiO, which has the property of a p-type semiconductor, and then ZnO and NiO formed a p-n junction for a large area light emitting diode.