Hydroxyl radical (OH radical) is the most harmful free radical amongst the Reactive Oxygen Species (ROS) responsible for numerous diseases of DNA damage like mutagenesis, carcinogenesis and ageing. Therefore, it is important to find a suitable scavenger for OH radical. In the present contribution, we aim to investigate the ability of pristine armchair-SWCNT and B/N/P-doped armchair-SWCNT to scavenge OH radicals using DFT calculations. The calculations reveal that the B/Pdoped armchair-SWCNTs can act as a better scavenger for OH radical compared to pristine armchair-SWCNT but N-doped armchair-SWCNT does not act as a better scavenger for OH radical compared to pristine armchair-SWCNT. Furthermore, the developed scavenger is examined in terms of large-scale availability, biocompatibility, conductivity, stability and reactivity. For both in vivo and in vitro studies, the work is found to useful for enhancing SWCNT as a free radical scavenger.

The thermoelectric Seebeck and Peltier effects of a single walled carbon nanotube (SWCNT) quantum dot nanodevice are investigated, taking into consideration a certain value of applied tensile strain and induced ac-field with frequency in the terahertz (THz) range. This device is modeled as a SWCNT quantum dot connected to metallic leads. These two metallic leads operate as a source and a drain. In this three-terminal device, the conducting substance is the gate electrode. Another metallic gate is used to govern the electrostatics and the switching of the carbon nanotube channel. The substances at the carbon nanotube quantum dot/ metal contact are controlled by the back gate. Results show that both the Seebeck and Peltier coefficients have random oscillation as a function of gate voltage in the Coulomb blockade regime for all types of SWCNT quantum dots. Also, the values of both the Seebeck and Peltier coefficients are enhanced, mainly due to the induced tensile strain. Results show that the three types of SWCNT quantum dot are good thermoelectric nanodevices for energy harvesting (Seebeck effect) and good coolers for nanoelectronic devices (Peltier effect).