In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/HfO2/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of HfO2. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/HfO2/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/HfO2/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

PURPOSES: The purpose of this study is to evaluate the effect of the quiet pavement on reducing a barrier height by using a prediction tool called SoundPLAN. METHODS: Firstly, the prediction was carried out to evaluate the difference in the maximum noise level at a building facade between the normal and the quiet pavements without a barrier. After calculating the noise reduction effect by the quiet pavement, a comparable barrier height to obtain the same noise reduction effect with it was predicted according to designable factors including road-building distance(10 m, 20 m, 40 m) and road-barrier distance(5 m, 10 m, 20 m, 30 m). RESULTS: The result showed that within the considered designable factors, the maximum barrier height was 37 m, 52 m, and 55 m to have the same noise reduction effect by the quiet pavement reducing 1 dBA, 3 dBA , and 5 dBA, respectively. It was evaluated that the barrier height increased with the increase of the road-building and road-barrier distances. To simulate the real situation in urban areas and to evaluate the combined effect of the normal/quiet pavement and barrier, the barrier height was fixed as 6 m. It was predicted that the noise level would reduce to as low as 0.2 dBA by the combination of normal pavement and barrier. On the other hand, the combination of the quiet pavement and barrier reduced 1.2 dBA, 3.2 dBA, and 5.2 dBA, respectively, for quiet pavement reducing 1 dBA, 3 dBA, and 5 dBA. CONCLUSIONS: A guideline needs to be suggested to select appropriate noise abatement schemes by considering factors such as the roadbuilding and road-barrier distances.

PURPOSES : A study on the efforts to minimize the road traffic noise has been underway. An attempt has been made to measure the noise level using a noise map; however, the attempt is limited to certain areas only. In general, a noise barrier is employed to prevent road traffic noise; however, unplanned noise barriers developed without considering the surrounding environment, including excessively high walls, cause problems such as infringement on prospect right. Noise ceiling at daytime in Korea is 68 dB(A), which is relatively higher than in other countries. METHODS: The noise barrier used mainly for road noise reduction was analyzed to estimate the optimal height. Related variables such as road width, the height of the upper part, distance to the building, and angle (for instance, 30。). RESULTS : A formula to calculate the optical height of the noise barrier, considering the road environment (i.e., parameters such as road width and distance to building), was developed in this study in an attempt to mitigate the noise generated from the road. CONCLUSIONS : The formula to calculate the noise barrier is expected to lead to cost saving, accurate installation of barriers, and protection of the right of prospect.

본 연구의 목적은 장애물 높이에 따른 상지 팔운동 제한이 스텝안정화(stabilization step)에 영향을 주는지 알아보기 위하여 실시하였다. 연구대상자는 대학생 남자 14명, 여자 16명으로 총 30명이였으며, 평균 연령은 21.5세이었다. 스텝 안정화는 FASTEX(functional activity System for testing and exercise, Cybex Division of Lumex, Inc., USA)를 이용하여 측정하였다.

Au/Si(100) Schotty diode를 l00k~300k 온도범위에서 current voltage(I-V), capacitance-voltage(C-V)측정을 하였다. 얻어진 Schottky barrier height(SBH)갑은 실온에서 두측정값 모두 (0.79±0.02)eV 이다. 그러나 온도가 감소할수록 I-V측정에서 SBH는 선형적으로 감소하고 C-V측정에서 SBH는 온도에 따른 변화가 관찰되지 않았다. 이것은 낮은 온도에서 열이온 방출 이론을 따르지 않는다는 것을 나타낸다. 이것으로 재결합 전류를 고려하여 계산해 본 결과 I-V에서도 SBH의 변화가 관찰되지 않으므로 C-V측정과 일치됨을 보았다. 이런 상반된 결과를 가져오는 이유는 전류수송현상이 온도에 따라 변화하므로 생긴 것임을 알 수 있었다.