Combining CuPc with semiconductor materials as organic‒inorganic hybrid photocatalysts can effectively improve the light absorption capacity and separation efficiency of photogenerated electrons and holes in semiconductor photocatalysts. Herein, a CuPc/Bi2WO6 Z-scheme heterojunction was successfully designed and used for CO2 photoreduction. The separation of photogenerated electrons and holes is greatly enhanced because of the formation of a compact organic‒inorganic heterointerface and the built-in electric field between CuPc and Bi2WO6, which increases the photocatalytic CO2 reduction efficiency. Moreover, the photosensitizer CuPc can effectively enhance the light absorption of Bi2WO6. The optimal 1CuPc/ Bi2WO6 composite exhibits the best photocatalytic performance, with a CO production rate of 2.95 μmol g− l h− 1, which is three times greater than that of Bi2WO6 under visible-light irradiation. This work provides a new idea for the construction of an organic‒inorganic photocatalytic system for CO2 reduction.

Facilitated olefin transport membrane, containing positively charged silver nanoparticles (AgNPs) as olefin carriers dispersed in poly(vinyl pyrrolidone) (PVP), leads extremely high separation performances for propylene/propane mixtures. In this study, as representatives of electron withdrawing nitrobenzene compounds, 1,2-dinitrobenzene (DNB) and 3,4-dinitro toluene (DNT) were used for PVP/AgNPs membranes. The correlation between the surface charge density of AgNPs and the separation performance was investigated with X-ray photoelectron spectroscopy (XPS). A fairly good linear correlation between the surface charge density and the separation performance was confirmed, which meant that the positive charge density on the surface of AgNPs may be a key factor in determining the separation performance of facilitated olefin transport membranes.

본 연구에서는 X선 조사에 의해 생성된 전하의 이동현상을 조사하기 위해 비행시간 측정방법을 이용하였다. 이 측 정기술은 일반적으로 디지털 X선 영상 변환물질의 전하 트랩 및 수송현상에 유용한 방법이다. 비행시간 측정법을 이용 하여 a-Se 광도전체의 전하 수송자의 과도시간 및 이동속도를 측정하였다. 시편제작을 위해 열증착법을 이용하여 유 리기판위에 400 ㎛ 두께의 a-Se 필름을 제작하였다. 측정결과, 전자와 정공의 과도시간은 10 V/㎛의 전기장에서 각각 229.17 ㎲ 와 8.73 ㎲ 였으며, 이동속도는 각각 0.00174 ㎠/V․s, 0.04584 ㎠/V․s 였다. 측정결과, 전자와 정공의 이 동 속도의 측정값에 다소 큰 차이를 보였으며, 이 결과로부터 전하수송 및 트랩 기전을 분석하는데 이용하였다.