An all-perovskite oxide heterostructure composed of SrSnO3/Nb-doped SrTiO3 was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film’s composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO3 and Nb-doped SrTiO3 were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

Orthorhombic DyMnO3 films are fabricated epitaxially on Nb-1.0 wt%-doped SrTiO3 single crystal substrates using pulsed laser deposition technique. The structure of the deposited DyMnO3 films is studied by X-ray diffraction, and the epitaxial relationship between the film and the substrate is determined. The electrical transport properties reveal the diodelike rectifying behaviors in the all-perovskite oxide junctions over a wide temperature range (100 ~ 340 K). The forward current is exponentially related to the forward bias voltage, and the extracted ideality factors show distinct transport mechanisms in high and low positive regions. The leakage current increases with increasing reverse bias voltage, and the breakdown voltage decreases with decrease temperature, a consequence of tunneling effects because the leakage current at low temperature is larger than that at high temperature. The determined built-in potentials are 0.37 V in the low bias region, and 0.11 V in the high bias region, respectively. The results show the importance of temperature and applied bias in determining the electrical transport characteristics of all-perovskite oxide heterostructures.

The electrical transport properties of La0.5Sr0.5CrO3 below room temperatures were investigated by dielectric, dc resistivity, magnetic properties and thermoelectric power. Below TC, La0.5Sr0.5CrO3 contains a dielectric relaxation process in the tangent loss and electric modulus. The La0.5Sr0.5CrO3 involves the transition from high temperature thermal activated conduction process to low temperature one. The transition temperature corresponds well to the Curie point. The relaxation mechanism has been discussed in the frame of electric modulus spectra. The scaling behavior of the modulus suggests that the relaxation mechanism describes the same mechanism at various temperatures. The low temperature conduction and relaxation takes place in the ferromagnetic phase. The ferromagnetic state in La0.5Sr0.5CrO3 indicates that the electron - magnon interaction occurs, and drives the carriers towards localization in tandem with the electron - lattice interaction even at temperature above the Curie temperature.

In this study, we fabricated a polymer light emitting diode (PLED) and investigated its electrical and optical characteristics in order to examine the effects of the PFO [poly(9,9-dioctylfluorene-2-7-diyl) end capped with N,N-bis(4-methylphenyl)-4-aniline] concentrations in the emission layer (EML). The PFO polymer was dissolved in toluene ranging from 0.2 to 1.2 wt%, and then spin-coated. To verify the influence of the TPBI [2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]electron transport layer, TPBI small molecules were deposited by thermal evaporation. The current density, luminance, wavelength and current efficiency characteristics of the prepared PLED devices with and without TPBI layer at various PFO concentrations were measured and compared. The luminance and current efficiency of the PLED devices without TPBI layer were increased, from 117 to 553 cd/m2 and from 0.015 to 0.110 cd/A, as the PFO concentration increased from 0.2 to 1.0 wt%. For the PLED devices with TPBI layer, the luminance and current efficiency were 1724 cd/m2 and 0.501 cd/A at 1.0 wt% PFO concentration. The CIE color coordinators of the PLED device with TPBI layer at 1.0 wt% PFO concentration showed a more pure blue color compared with the one without TPBI, and the CIE values varied from (x, y) = (0.21, 0.23) to (x, y) = (0.16, 0.11).

The (1-x)La0.7Sr0.3MnO3(LSMO)/xZnFe2O4(ZFO) (x = 0, 0.01, 0.03, 0.06 and 0.09) composites were prepared by a conventional solid-state reaction method. We investigated the structural properties, magnetic properties and electrical transport properties of (1-x)LSMO/xZFO composites using X-ray diffraction (XRD), scanning electron microscopy (SEM), field-cooled dc magnetization and magnetoresistance (MR) measurements. The XRD and SEM results indicate that LSMO and ZFO coexist in the composites and the ZFO mostly segregates at the grain boundaries of LSMO, which agreed well with the results of the magnetic measurements. The resistivity of the samples increased by the increase of the ZFO doping level. A clear metal-to-insulator (M-I) transition was observed at 360K in pure LSMO. The introduction of ZFO further downshifted the transition temperature (350K-160K) while the transition disappeared in the sample (x = 0.09) and it presented insulating/semiconducting behavior in the measured temperature range (100K to 400K). The MR was measured in the presence of the 10kOe field. Compared with pure LSMO, the enhancement of low-field magnetoresistance (LFMR) was observed in the composites. It was clearly observed that the magnetoresistance effect of x = 0.03 was enhanced at room temperature range. These phenomena can be explained using the double-exchange (DE) mechanism, the grain boundary effect and the intrinsic transport properties together.

Thermoelectric power and resistivity are measured for the perovskite LaNi1-xTixO3 (x≤0.5) in thetemperature range 77K−300K. The measured thermoelectric power of LaNi1-xTixO3 (x≤0.5) increases linearlywith temperature and is represented by A+BT. The x=0.1 sample showed metallic behavior, the x=0.3showed metal and insulating transition around 150K, and x=0.5 showed insulating behavior the over thewhole temperature range. The electrical resistivity of x=0.1 shows linear temperature dependence over thewhole temperature range and T2 dependence. On the other hand, the electrical resistivity of x=0.3 shows alinear relation between lnρ and T−1/4 (variable range hopping mechanism) in the range of 77K to 150K. Forx=0.5, the temperature dependence of resistivity is characteristic of insulating materials; the resistivity datawas fitted to an exponential law, such as ln(ρ/T) and T−1, which is usually attributed to a small polaronhopping mechanism. These experimental results are interpreted in terms of the spin polaron (x=0.1) andvariable range hopping (x=0.3) or small polaron hopping (x=0.5) of an almost localized Ni3+ 3d polaron.

In this study, the thermoelectric power and resistivity of the perovskite manganiteLa0.75Ba0.25MnO3 were investigated in the temperature range 300K-1200K. The electrical resistivity andthermoelectric power indicate a transport mechanism dominated by adiabatic small-polaron hopping. Thepower factor increases from 2×10−6W/mK2 to 1×10−5W/mK2 as to the temperature increases from 400K to1200K, which indicates that the compound is highly feasible as a thermoelectric material at high temperatures.

기판온도, 박막조성 및 증착후 열처리 등의 조건에 따른 La1-xSrxMnO3-δ(0.19≤x≤0.31) 박막의 결절구조와 전기전도 특성을 조사하였다. 스퍼터법을 이용하여 500˚C에서 증착된 박막은 강한<001> 우선배향성과 유사정방정(pseudo-tetrag-onal, a/c-=0.97) 결정체를 나타냈다. 이러한 박막의 단위포는 산소분위기 내에서 증착후 열처리에 의하여 입장정 결정계로 변하였다. La0.67Sr0.33MnO3 조성의 주타겟과 La0.3Sr0.7MnO3조성의 보조타겟을 동시에 이용하여 박막의 조성을 조절하였다. 보조타겟의 개수에 따라 박막내의 Sr 함량(x)은 0.19-0.31 범위의 값을 나타내었으며, x값이 0.19로부터 0.31로 증가시 금소-반도체의 전이 온도가 상승하였고, 전지비저항이 대체로 감소하였다. 0.18 T의 자기장 하에서, La0.69Sr0.31MnO3조성의 박막의 자기저항변화 MR((%) = (ρo-ρH/ρH)는 약 390% 이었다.

본 연구에서는 TDR의 반향파의 특성과 총토양전기전도도의 관계를 이용한 비포화 토양에서의 용존오염원 농도를 측정하는 방법을 개발하였다. 본 연구에서 제안한 방법은 두 가지 중요한 관계를 결합한 것으로 첫 번째는 함수량이 일정할 경우 전기전도도와 토양수 농도는 선형관계를 유지한다는 것이며, 두 번째는 천이상태의 용존여염원의 농도를 측정할 수 있게 하기 위해 함수량과 전기전도도의 관계를 설정하는 것이다. 함수량과 전기전도도의 관계를 추정하는 식들이 여러 연