An all-perovskite oxide heterostructure composed of SrSnO3/Nb-doped SrTiO3 was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film’s composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO3 and Nb-doped SrTiO3 were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

A non-volatile resistive random access memory (RRAM) device with a Cr-doped SrZrO3/SrRuO3 bottom electrode heterostructure was fabricated on SrTiO3 substrates using pulsed laser deposition. During the deposition process, the substrate temperature was 650˚C and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped SrZrO3 film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped SrZrO3 film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped SrZrO3. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped SrZrO3 perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of 100-200 Ω and a typical OFF state resistance of 1-2 kΩ, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

ECR PECVD법에 의해 Pt/Ti/SiO2/Si 다층 기판 위에 480˚C에서 순수한 페로브스카이트상의 PLT박막을 증착하였다. PLT 박막 증착전 ECR산소 플라즈마내에서의 Pb(DPM)2 pre-flowing처리는 Pb(DPM)2의 공급을 안정화시켜주며 박막증착초기에 Pb성분이 풍부한 분위기를 조성해 줌으로써 페로브스카이트 핵생성을 용이하게 하여 PLT박막 특성을 향상시켰다. Ti-source 유입량을 변화시킬 때 PLT박막의 증착특성, 조성, 결정상 그리고 전기적 특성을 관찰하였다. PLT박막은(100)으로 우선 배향되었으며 화학양론비가 잘 맞는 경우 높은 페로브스카이트 X-선 회절강도와 높은 유전율을 나타내었다.