Numerous research institutes have been studying semiconductor devices using two-dimensional materials for several years. However, the findings of these studies have yet to demonstrate the performance of digital devices that could replace silicon devices in the semiconductor industry. Nonetheless, the high carrier mobility and saturation velocity of 2-D materials remain attractive for semiconductor device performance, particularly in analog devices where these features can be utilized. In this research, we fabricated a phase-shift controller, a typical component of analog circuits, using 2-D materials and verified its operational characteristics. Analog circuits do not require large area integration, so we employed graphene, which has relatively simple formation and processing, as the 2-D material. Devices using graphene as a channel exhibit a V-shaped I–V characteristic, allowing for the input voltage to be adjusted to produce various modes of output characteristics. This means that the same devices can generate a phase-shifted output and an output with double the frequency by simply adjusting the input voltage range. This research is particularly meaningful since it demonstrates not only the potential of 2-D materials but also their potential for direct application to the semiconductor industry. These findings will contribute to the development of system IC technology and various applications.

Gd박막의 강자성-상자성 상전이 온도(Tc)이동을 조사했다. 강자성-상자성 상전이 온도에서 전기저항이 변화되는 변곡점을 관측하여 Tc를 결졍하였는데, 두께가 6600Å인 Gd박막의 상전이 온도는 bulk상태의 Gd의 전이온도보다 4±0.3˚C정도 아래로 이동됨을 알았다. 이것은 강자성 Gd박막의 Tc이동에 대한 최초의 측정이며, 실험과 finite-sime scaling이론을 비교 분석했다.