In this study, we have investigated a selective emitter using a UV laser on BBr3 diffusion doping layer. The selective emitter has two regions of high and low doping concentration alternatively and this structure can remove the disadvantages of homogeneous emitter doping. The selective emitters were fabricated by using UV laser of 355 nm on the homogeneous emitters which were formed on n-type Si by BBr3 diffusion in the furnace and the heavy boron doping regions were formed on the laser regions. In the optimized laser doping process, we are able to achieve a highly concentrated emitter with a surface resistance of up to 43 Ω/□ from 105 ± 6 Ω/□ borosilicate glass (BSG) layer on Si. In order to compare the characteristics and confirm the passivation effect, the annealing is performed after Al2O3 deposition using an ALD. After the annealing, the selective emitter shows a better effect than the high concentration doped emitter and a level equivalent to that of the low concentration doped emitter.

When taking X-ray, Some of them are not only absorbed as they pass through the body, but some are scattered and blurred. To prevent this problem, 'X-Ray Grid' was placed between the body and the film. Conventionally, in order to manufacture an X-ray grid, a lead sheet and an aluminum sheet were adhered with epoxy or the like, cut to a predetermined thickness, and formed in a line at a predetermined angle. New grids are actively being developed to solve this problem. In this study, Laser beam was irradiated on a photosensitive glass having high X-ray transmittance to form an oblique lattice type channel. When the photosensitive glass is exposed to Laser beam, Previous studies have shown that laser exposure to photosensitive glass reacts with UV-Laserto form high-precision microstructures. The photosensitive glass exposed by the laser is heat-treated at a high temperature to crystallize the exposed part. When the crystallized patterns are etched with a hydrofluoric acid liquid solution, a structure having a depth is completed. The completed structure is filled with metals with X-ray shielding properties. The angle of incidence can be processed up to 18, which is the angle of incidence of ordinary X-ray, The upper surface line width of theetched pattern is 20um or less and The depth of processing after etching was found to be more than 100um, which means 'the filler can be deposited sufficiently'.