Indium doped SnO2 thick films for gas sensors were fabricated by a screen printing method on alumina substrates. The effects of indium concentration on the structural and morphological properties of the SnO2 were investigated by X-ray diffraction and Scanning Electron Microscope. The structural properties of the SnO2:In by X-ray diffraction showed a (110) dominant SnO2 peak. The size of SnO2 particles ranged from 0.05 to 0.1 μm, and SnO2 particles were found to contain many pores, according to the SEM analysis. The thickness of the indium-doped SnO2 thick films for gas sensors was about 20 μm, as confirmed by cross sectional SEM image. Sensitivity of the SnO2:In gas sensor to 2000 ppm of CO2 gas and 50 ppm of H2S gas was investigated for various indium concentrations. The highest sensitivity to CO2 gas and H2S gas of the indium-doped SnO2 thick films was observed at the 8 wt% and 4 wt% indium concentration, respectively. The good sensing performances of indium-doped SnO2 gas sensors to CO2 gas were attributed to the increase of oxygen vacancies and surface area in the SnO2:In. The SnO2:In gas sensors showed good selectivity to CO2 gas.

• 유일 | Yu, Il
• 이지영 | 이지영