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습식 식각에 의한 실리콘 웨이퍼의 표면 및 전기적 특성변화(2) - 표면거칠기와 전기적 특성의 상관관계 - KCI 등재 SCOPUS
Change of Surface and Electrical Characteristics of Silicon Wafer by Wet Etching(2) - Relationship between Surface Roughness and Electrical Properties -
pp.322-328
The relationship the between electrical properties and surface roughness (Ra) of a wet-etched silicon wafer were studied. Ra was measured by an alpha-step process and atomic force microscopy (AFM) while varying the measuring range 10×10, 40×40, and 1000×1000μm. The resistivity was measured by assessing the surface resistance using a four-point probe method. The relationship between the resistivity and Ra was explained in terms of the surface roughness. The minimum error value between the experimental and theoretical resistivities was 4.23% when the Ra was in a range of 10×10μm according to AFM measurement. The maximum error value was 14.09% when the Ra was in a range of 40×40μm according to AFM measurement. Thus, the resistivity could be estimated when the Ra was in a narrow range.
