WC-TiC-TaC binderless cemented carbide was oxidized under low partial pressure of oxygen (50ppm) at 873K for 1 to 20 h. Surface roughness was measured using atomic force microscope, and effect of TiC amount on oxidation behavior of the carbide was investigated. WC phase was oxidized more easily than WC-TiC-TaC solid solution phase. With an increase in TiC amount, WC-TiC-TaC phase increased and the oxidation resistance of the carbide increased.