The sintering shrinkage behaviors of low temperature cofired ceramics (LTCC) and resistors were compared using commercial LTCC and thick-film resistor pastes, and factors influencing the camber of cofired resistor/LTCC bi-layers were also investigated. The onset of sintering shrinkage of the resistor occurred earlier than that of LTCC in all resistors, but the end of sintering shrinkage of the resistor occurred earlier or later than that of LTCC depending on the composition of the resistor. The sintering shrinkage end temperature and the sintering shrinkage temperature interval of the resistor increased as the RuO2/glass volume ratio of the resistor increased. The camber of cofired resistor/LTCC bi-layers was obtained using three different methods, all of which showed nearly identical trends. The camber of cofired resistor/LTCC bi-layers was not affected by either the difference in linear shrinkage strain after sintering between LTCC and resistors or the similarity of sintering shrinkage temperature ranges of LTCC and resistors. However, it was strongly affected by the RuO2/glass volume ratio of the resistor. The content of Ag and Pd had no effect on the sintering shrinkage end temperature or sintering shrinkage temperature interval of the resistor, or on the camber of cofired resistor/LTCC bi-layers.

Recrystallization behavior has been investigated for commercial purity AA1050 (99.5wt%Al) and high purity 3N Al (99.9wt% Al). Samples were cold rolled with 90% of thickness reduction and were annealed isothermally at 290, 315, and 350oC for various times until complete recrystallization was achieved. Hardness measurement and Electron Backscatter Diffraction(EBSD) analyses, combined with Grain Orientation Spread(GOS), were employed to investigate the recrystallization behavior. EBSD analysis combined with GOS were distinctly revealed to be a more useful method to determine the recrystallization fraction and to characterize the recrystallization kinetics. As the annealing temperature increased, recrystallization in AA1050 accelerated more than that process did in Al 3N. Both AA1050 and Al 3N showed the same temperature dependence of the n value of the Johnson-Mehl-Avrami-Kolmogorov equation(JMAK equation), i.e., n values increased as annealing temperature increased. Activation energy of recrystallization in AA1050 is about 176 kJ/mol, which is comparable with the activation energy of grain boundary migration in cold-rolled AA1050. This value is somewhat higher than the activation energy of recrystallization in Al 3N.

본 연구는 압연공정을 이용하여 금속망 만을 사용하여 금속막을 제조하는 과정과 금속망과 금속분말을 사용하여 금속막을 제조하는 과정에 대해 연구했다. 금속망 압연과정에서 선택된 금속망은 각각 10%, 20% 그리고 30%의 감소율로 압연했다. 이 압연공정은 망 wire의 지름을 변화시키거나 망의 단면적의 감소를 통해 망의 공경 크기를 감소시킨다. 압연된 금속망의 여과율은 압연시키지 않은 금속망의 여과율과 거의 동일한 여과율을 보였으며 금속막의 공경크기 분포 또한 더 균일했다. 금속망 위에 금속분말 층을 제조하는데 있어 분말 접합제로서 PVA를 사용하였으며 1시간 동안 100℃에서 금속분말 층을 건조시키고 진공에서 3시간 동안 1000℃에서 소결시키는 방법이 높은 공경 밀도와 균열이 없는 금속망 위에 금속분말 층을 형성하는 최적 조건이었다. 소결 전 30%감소율을 가지는 금속망에 대해 금속분말 층 형성에 압연공정을 적용할 경우 여과율이 약 0.7 μm인 금속막이 성공적으로 제조되었다.