Ni hydroxides (Ni(OH)2) are synthesized on Ni foam by varying the hexamethylenetetramine (HMT) concentration using an electrodeposition process for pseudocapacitor (PC) applications. In addition, the effects of HMT concentration on the Ni(OH)2 structure and the electrochemical properties of the PCs are investigated. HMT is the source of amine-based OH− in the solution; thus, the growth rate and morphological structure of Ni(OH)2 are influenced by HMT concentration. When Ni(OH)2 is electrodeposited at a constant voltage mode of -0.85 V vs. Ag/AgCl, the cathodic current and the number of nucleations are significantly reduced with increasing concentration of HMT from 0 to 10 mM. Therefore, Ni(OH)2 is sparsely formed on the Ni foam with increasing HMT concentration, showing a layered double-hydroxide structure. However, loosely packed Ni(OH)2 grains that are spread on Ni foam maintain a much greater surface area for reaction and result in the effective utilization of the electrode material due to the steric hindrance effect. It is suggested that the Ni(OH)2 electrodes with HMT concentration of 7.5 mM have the maximum specific capacitance (1023 F/g), which is attributed to the facile electrolyte penetration and fast proton exchange via optimized surface areas.

We report on the successful fabrication of ZnO nanorod (NR)/polystyrene (PS) nanosphere hybrid nanostructure by combining drop coating and hydrothermal methods. Especially, by adopting an atomic layer deposition method for seed layer formation, very uniform ZnO NR structure is grown on the complicated PS surfaces. By using zinc nitrate hexahydrate [Zn(NO3)2 ·6H2O] and hexamine [(CH2)6N4] as sources for Zn and O in hydrothermal process, hexagonal shaped single crystal ZnO NRs are synthesized without dissolution of PS in hydrothermal solution. X-ray diffraction results show that the ZnO NRs are grown along c-axis with single crystalline structure and there is no trace of impurities or unintentionally formed intermetallic compounds. Photoluminescence spectrum measured at room temperature for the ZnO NRs on flat Si and PS show typical two emission bands, which are corresponding to the band-edge and deep level emissions in ZnO crystal. Based on these structural and optical investigations, we confirm that the ZnO NRs can be grown well even on the complicated PS surface morphology to form the chestnut-shaped hybrid nanostructures for the energy generation and storage applications

We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators(PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solutionbased method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameterof 75~80 nm and length of 1~1.5 µm. The ZnO NRs showed abnormal photoluminescence specrta which is attributedfrom surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates showtypical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity depen-dent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain fre-quency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 timeswithout showing degradation of output voltage. The current output from the PNG is 0.7 µA/cm2 which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, highelectrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

NiO catalysts/Al2O3/FeCrAl alloy foam for hydrogen production was prepared using atomic layer deposition (ALD)and subsequent dip-coating methods. FeCrAl alloy foam and Al2O3 inter-layer were used as catalyst supports. To improve thedispersion and stability of NiO catalysts, an Al2O3 inter-layer was introduced and their thickness was systematically controlledto 0, 20, 50 and 80nm using an ALD technique. The structural, chemical bonding and morphological properties (includingdispersion) of the NiO catalysts/Al2O3/FeCrAl alloy foam were characterized by X-ray diffraction, X-ray photoelectronspectroscopy, field-emission scanning electron microscopy and scanning electron microscopy-energy dispersive spectroscopy. Inparticular, to evaluate the stability of the NiO catalysts grown on Al2O3/FeCrAl alloy foam, chronoamperometry tests wereperformed and then the ingredient amounts of electrolytes were analyzed via inductively coupled plasma spectrometer. We foundthat the introduction of Al2O3 inter-layer improved the dispersion and stability of the NiO catalysts on the supports. Thus, whenan Al2O3 inter-layer with a 80nm thickness was grown between the FeCrAl alloy foam and the NiO catalysts, it indicatedimproved dispersion and stability of the NiO catalysts compared to the other samples. The performance improvement can beexplained by optimum thickness of Al2O3 inter-layer resulting from the role of a passivation layer.

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlledthe uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films,AZO films using ALD was controlled to be three different thicknesses (50nm, 100nm, and 150nm). The structural, chemical,electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy,field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Visspectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased,and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The averagesurface roughnesses of the samples using atomic force microscopy were ~3.01nm, ~2.89nm, and ~2.44nm, respectively. Asthe thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and opticalproperties of AZO thin films. Therefore, the thickest AZO thin films with 150nm exhibited excellent resistivity (~7.00×10−4Ω·cm), high transmittance (~83.2%), and the best FOM (5.71×10−3Ω−1). AZO thin films fabricated using ALD may be usedas a promising cadidate of TCO materials for optoelectronic applications.

아케이드 건의 대표적인 컨트롤 방식은 라이트 건과 포지셔널 건 두 가지로 나누어진다. 라이트 건은 모니터의 유형 및 해상도, 리프레시 비율 등의 요소에 따라 사용의 제한을 받으며, 포지셔널 건은 한정된 플랫폼 및 고정된 인터페이스로 인한 낮은 자유도를 갖는다. 따라서 본 논문에서는 이러한 문제점을 해결하기 위해 새로운 아케이드 건 컨트롤 방식인 IRED을 제안한다. IRED Gun은 기존의 방식과는 달리 적외선 IRED추적을 이용하며, 조준 위치 보정을 통하여 정확한 조준 좌표 값을 계산한다. 실험 결과, 본 논문에서는 적외선 LED추적과 보정 방법의 실행 가능성과 타당성을 증명 하였다. 또한, IRED Gun은 기존의 시스템에 비해 구축비용에 있어 저렴하고, 범용적으로 사용될 수 있다.