[ Cf/C-Cu ]composites were fabricated by infiltrating molten Cu into different Cf/C preforms prepared by chemical vapor infiltration, resin impregnation and carbonization. The microstructure and properties of the composites were investigated. The results show that Cu in the composites filled the pores and showed network-like distribution. Compared with homemade J204 brush material and certain grade pantograph slider from abroad, the composites have higher flexural strength and better electrical conductivity. The friction and wear properties of the composites are better than that of J204, and closed to that of the abroad material.

The introduction of ceramic particulate into metallic powder will unavoidably lower the compressibility and formability of the mixed powder. In this study, warm compaction, which is a simple and low cost technique to produce high density PM parts, was introduced in preparing composite. The aim of this paper is to prepare the warm compacted NbC particulate reinforced Fe-based composite, then study its tribological behavior and application in the valve-guide cup. A 15 wt.% NbC reinforced iron-based composite was prepared. It possesses a relative density of 98%, a tensile strength of 515 MPa, a hardness of HRC 58 and a remarkable tribological behavior.

Purpose - In 2022, the United States introduced Creative Helpful Incentives to Produce Semiconductors for America Act, which strengthened the export control on China’s chips, semiconductors, and other products. The scientific and technological relation between China and the United States is in a tense state, which has a negative impact on the complementary development of technology between China and the United States, as well as the development of China’s semiconductor industry. In the current situation of the scientific and technological relation between China and the United States, this paper hopes to play a certain reference role in the faster and better development of China’s semiconductor industry. Design/Methodology/Approach - This paper uses literature analysis, qualitative analysis and case analysis to elaborate on the general situation of the semiconductor industry and the development process of China’s semiconductor industry under the global semiconductor industry, and analyzes the development, present situation and future of Sino-us scientific and technological relations. Findings - This paper discusses the development problems and opportunities of China’s semiconductor industry under the Sino-US science and technology relations, and puts forward the development strategy of China’s semiconductor industry under the Sino-US science and technology relations. This paper can bring enlightenment to the development of China’s semiconductor industry under the Sino-US science and technology relations. Research Implications - Through the study of the development opportunities and strategies of China’s semiconductor industry under the Sino-US scientific and technological relation, Chinese semiconductor enterprises can better cope with the impact of the United States on the development of China’s semiconductor industry, grasp the development opportunities of the semiconductor industry, and achieve the development goals of the semiconductor industry in the difficult situation.