Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

배관을 구속시키기 위한 원동형 배관 지지대 (Trunnion Pipe Support) 까 부착된 uß 간의 응-딱해석플 위하 여 유한요소해석을 사용하였다. 해석션파로 부터 얻어진 응역은 두께에 대한 평칸(막응역) 넷 선행 응→박( ""," 힘응력) 으로 분류 되었므며， 분류된 응벽값은 암략에 악한 언차응략겨l 수 (B 1 ) 와 이자응역겨l 수 (C 1 ) ， 보멘트에 의한 일차응력계수 (B" ， Bιr) 와 이차응략셰수 (C객， C!T) 플- 추성하시 위하여 ASME Code 에 성의뭔것파 일치 하게 해석되었다 무차원의 함수로써 응력 세수에 대한 경험식 얀 새만히기 위하여 여서 ~i~ l;'l 의 해삭 2~ 수행하 였다.