Thermal management is one of the critical aspects in the design of highly integrated microelectronic devices. The reliability of electronic components is limited not only to operating temperature but also by the thermal stresses caused during the operation. The need for higher power densities calls for use of advanced heat spreader materials. A copper diamond composite has been developed with high thermal conductivity (λ) and tailorable coefficient of thermal expansion (CTE). Copper diamond composites are processed via gas pressure assisted infiltration with different copper alloys. Emphasis has been placed on the addition of trace elements in deisgning the copper alloys to facilitate a compromise between thermal conductivity and mechanical adhesion. The interfaces between the alloy and the diamond are related to the thermal properties of these copper composites.