Various morphologies of copper oxide (CuO) have been considered to be of both fundamental and practical importance in the field of electronic materials. In this study, using Cu (0.1 μm and 7 μm) particles, flake-type CuO particles were grown via a wet oxidation method for 5min and 60min at 75 oC. Using the prepared CuO, AlN, and silicone base as reagents, thermal interface material (TIM) compounds were synthesized using a high speed paste mixer. The properties of the thermal compounds prepared using the CuO particles were observed by thermal conductivity and breakdown voltage measurement. Most importantly, the volume of thermal compounds created using CuO particles grown from 0.1 μm Cu particles increased by 192.5% and 125 % depending on the growth time. The composition of CuO was confirmed by X-ray diffraction (XRD) analysis; cross sections of the grown CuO particles were observed using focused ion beam (FIB), field emission scanning electron microscopy (FE-SEM), and energy dispersive analysis by X-ray (EDAX). In addition, the thermal compound dispersion of the Cu and Al elements were observed by X-ray elemental mapping.

In this study the optimum conditions for recovery of valuable metal in Electric Arc Furnace Dusts were investigated. 2M of H2SO4, 1~5 of solid/liquid ratio, 0~180 min of leaching time has been established for leaching condition, and for electrowinning, each of Pt, C, Zn, Pb anode and Zn, Cu cathode was compared respectively at pH 2, 4 and 6. The result of elemental analysis of Zn crystal, a lagre quantity of Fe and H has been observed with Zn and other heavy metal, therefore, impurities removing process would be requir for enhancing purity of Zn. As the result, about 60% of Zn has been recovered under condition of 2 M of H2SO4, 1:2 of S/L ratio at 120 min, and Pt or Pb for anode, Zn for cathode has been shown the highest efficiency of electrowinning at pH 6.