(hfac) Cu(1,5-COD)(1,1,1,5,5,5-hexafluro-2,4-pentadionato Cu(I) 1,5-cyclooctadine) 증착원을 이용하여 MOCVD(metal organic chemical vapor deposition)로 Cu 박막을 형성시키고, MOCVD에 의한 TiN 기판 변화가 Cu 증착에 미치는 영향을 조사하였다. 공기 중에 노출시킨 기판은 MOCVD 에 의한 Cu 핵생성 및 초기성장에 영향을 미쳐 입자크기가 작고, 입자간의 연결성이 떨어졌으며, in-situ MOCVD Cu의 경우는 입자크기가 크고, 입자간의 연결성이 우수하여 1900Å 이상의 두께에서는 2.0μΩ-cm 정도의 낮은 비저항을 유지하였다. 또한 접착력에서는 in-situ MOCVD TiN 의 경우가 보다 우수하였다. 이와 같은 결과를 토대로 MOCVD Cu 성장단계를 제시하였다.

Many lakes or irrigative reservoirs in Korea are rapidly contaminated due to the ever increasing pollutants. Although lots of treatment processes have been recommended and practiced, economical and technical improvement is currently needed. In this study, contaminated irrigation reservoir was treated using the proposed process which is consisted of fine air bubbles, coagulation and flotation. Fine bubbles, approximate diameter of 3 to 10 ㎛, were generated using cavitation in the pressurized tank and polyaluminum chloride was used as coagulants. This fine bubbles, coagulation and flotation effectively controlled the low density algae, for example, Chlorophyll-a was removed more than 97 %. Removal efficiency of COD, SS, T-N and T-P were 80.7%, 94.3%, 64.1% and 92.4%, respectively. Pollutants released from the sediments was removed more than 80% of organics and 60-70 % of nutrients. Consequently, fine bubbles coagulation and flotation process could be effectively used as an alternative treatment method for the purpose of control of lake water quality.