In this work, we have designed a novel gas inlet structure for efficient usage of growth and doping precursors. Our previous gas injection configuration is that the gas is mixed to one pipe first, then divided into two pipes, and finally entered the chamber symmetrically above the substrate without a jet nozzle. The distance between gas inlet and substrate is about 14.75 cm. Our new design is to add a new tube in the center of the susceptor, and the distance between the new tube and substrate is about 0.5 cm. In this new design, different gas injection configurations have been planned such that the gas flow in the reactor aids the transport of reaction species toward the sample surface, expecting the utilization efficiency of the precursors being improved in this method. Experiments have shown that a high doping efficiency and fast growth could be achieved concurrently in diamond growth when methane and diborane come from this new inlet, demonstrating a successful implementation of the design to a diamond microwave plasma chemical vapor deposition system. Compared to our previous gas injection configuration, the growth rate increases by 15-fold and the boron concentration increases by ~ 10 times. COMSOL simulation has shown that surface reaction and precursor supply both have a change in determining the growth rate and doping concentration. The current results could be further applied to other dopants for solving the low doping efficiency problems in ultra-wide-band-gap semiconductor materials.

A basic metal deposition experiment for manufacturing aluminum parts was performed using WAAM (Wire arc additive manufacturing), and the cross-sectional shape of the laminate according to nine deposition conditions. The effect of heat input was analyzed for the bead shape according to the deposition conditions, and the deposition efficiency was calculated by analyzing the cross-sectional shape of thin-wall parts made of aluminum. The amount of heat input was used in the experiment from about 2.7 kJ/cm to 4.5 kJ/cm, and the closer the heat input was to 4.5kJ/cm, the higher the deposition efficiency was. The maximum lamination efficiency obtained through this study reached 76%.