Doping or incorporation with exotic elements are two manners to regulate the optoelectronic properties of transparent conducting (TCO) cadmium oxide (CdO). Nevertheless, the method of doping host CdO by CdTe semiconductor is of high importance. The structural, optical, and electrical properties of CdTe-doped CdO films are studied for the sake of promoting their conducting parameters (CPs), including their conductivity, carrier concentration, and carrier mobility, along with transparency in the NIR spectral region; these are then compared with the influence of doping the host CdO by pure Te ions. X-ray fluorescence (XRF), X-ray diffraction (XRD), optical absorption spectroscopy, and electrical measurements are used to characterise the deposited films prepared by thermal evaporation. Numerous results are presented and discussed in this work; among these results, the optical properties are studied through a merging of concurrent BGN (redshift) and BGW (blue shift) effects as a consequence of doping processes. The impact of hydrogenation on the characterisations of the prepared films is investigated; it has no qualitative effect on the crystalline structure. However, it is found that TCO-CPs are improved by the process of CdTe doping followed by hydrogenation. The utmost TCO-CP improvements are found with host CdO film including ~ 1 %Te, in which the resistivity decreases by ~ 750 %, carrier concentration increases by 355 %, and mobility increases by ~ 90% due to the increase of Ncarr. The improvement of TCO-CPs by hydrogenation is attributed to the creation of O-vacancies because of H2 molecule dissociation in the presence of Te ions. These results reflect the potential of using semiconductor CdTe -doped CdO thin films in TCO applications. Nevertheless, improvements of the host CdO CPs with CdTe dopant are of a lesser degree compared with the case of doping the host CdO with pure Te ions.

TiO2-particles containing Co grains are fabricated via thermal hydrogenation and selective oxidation of Ti- Co alloy. For comparison, TiO2-Co composite powders are prepared by two kinds of methods which were the mechanical carbonization and oxidation process, and the conventional mixing process. The microstructural characteristics of the prepared composites are analyzed by X-ray diffraction, field-emission scattering electron microscopy, and transmission electron microscopy. In addition, the composite powders are sintered at 800℃ by spark plasma sintering. The flexural strength and fracture toughness of the sintered samples prepared by thermal hydrogenation and mechanical carbonization are found to be higher than those of the samples prepared by the conventional mixing process. Moreover, the microstructures of sintered samples prepared by thermal hydrogenation and mechanical carbonization processes are found to be similar. The difference in the mechanical properties of sintered samples prepared by thermal hydrogenation and mechanical carbonization processes is attributed to the different sizes of metallic Co particles in the samples.

The HDDR(hydrogenation-disproportionation-desorption-recombination) process can be used as an effective way of converting no coercivity Nd-Fe-B material, with a coarse grain structure to a highly coercive one with a fine grain. Careful control of the HDDR process can lead to an anisotropic without any post aligning process. In this study, the effect of hydrogen gas input at various temperature in range of of hydrogenation stage (named Modified-solid HDDR, MS-HDDR) on the magnetic properties has been investigated. The powder from the modified-solid HDDR process exhibits Br of 11.7 kG and iHc of 10.7 kOe, which are superior to those of the powder prepared using the normal HDDR process.

This study examined the effect of growth temperature on the electrical and optical properties ofhydrogenated Al-doped zinc oxide (AZO:H) thin films deposited by rf magnetron sputtering using a ceramictarget (98wt.% ZnO, 2wt.% Al2O3). Various AZO films on glass were prepared by changing the substratetemperature from room temperature to 200oC. It was shown that intentionally incorporated hydrogen plays animportant role on the electrical properties of AZO:H films by increasing free carrier concentration. As a result,in the 2% H2 addition at the growth temperature of 150oC, resistivity of 3.21×10-4Ω·cm, mobility of 21.9cm2/V−s, electric charge carrier concentration of 9.35×1020cm-3 was obtained. The AZO:H films show a hexagonalwurtzite structure preferentially oriented in the (002) crystallographic direction.