Molybdenum is a low-resistivity transition metal that can be applied to silicon devices using Si-metal electrode structures and thin film solar cell electrodes. We investigate the deposition of metal Mo thin film by plasma-enhanced atomic layer deposition (PE-ALD). Mo(CO)6 and H2 plasma are used as precursor. H2 plasma is induced between ALD cycles for reduction of Mo(CO)6 and Mo film is deposited on Si substrate at 300℃. Through variation of PE-ALD conditions such as precursor pulse time, plasma pulse time and plasma power, we find that these conditions result in low resistivity. The resistivity is affected by Mo pulse time. We can find the reason through analyzing XPS data according to Mo pulse time. The thickness uniformity is affected by plasma power. The lowest resistivity is 176 μΩ·cm at Mo(CO)6 pulse time 3s. The thickness uniformity of metal Mo thin film deposited by PE-ALD shows a value of less than 3% below the plasma power of 200 W.

Pd게이트 MOS센서의 수소검지특성에 Pd 박막의 증착조건이 미치는 영향에 대해서 조사였다. rf power의 증가와 증착온도의 증가는 모두 센서의 감도와 초기반응속도를 감소시켰으며 rf power의 변화보다는 증착온도의 변화에 의한 효과가 현저하였다. 절연막을 SixNy /SiO2로 대신한 결과 SiO2에서돠는 달리 시간이 지남에 따라 평탄대역전압이 여러 단계로 변화하는 양상을 보였다. rf power, 증착온도, 기판의 변화가 MOS 센서의 감도나 초기반응속도등의 센서특성에 영향을 미친다는 사실을 확인할 수 있었다.

In this research, ultra-thin films of organic charge transfer complex were deposited on to ordinary microscope slide-glass subtrates with a Langmuir-Blodgett technique. π-A isotherm characteristics of these complex were studied in order to find optimum conditions of deposition by varying temperature of subphase, compression speed, and spreading amount. Transfer ratio of these films were studied during the process of deposition. The UV-visible absorbance spectra of LB films were measured to find state of deposition by varing layer number. The observed optimum conditions of surface, pressure, spreading amount, and dipping speed for depositing LB films(Y-type) were 38m/Nm, 150μl and 5mm/min, respectively. Since the tansfer ratio is close to 100%, the monolayer on the subphase seems to be well transferred to the solid substrate. The thickness of the film was well-controlled as the UV-vis absorbance of films were changed linear according to the number of layers.