In this study, high-efficiency InZnP/ZnSe/ZnS quantum dots (QDs) were synthesized and applied to the development of self-luminous traffic signs. The synthesized QDs exhibited a photoluminescence (PL) peak wavelength of 613 nm and a uniform nanoparticle size of 6 nm in diameter. Quantum dot films were coated using a roll-to-roll process with varying thicknesses (110 μm, 85 μm, and 75 μm), and color coordinate analysis confirmed that all films fell within the red region. A 4CL resin and PCB with high thermal dissipation properties were employed to fabricate the self-luminous traffic signs. Performance evaluations showed a white luminance of 625.4 cd/㎡, a red luminance of 220.2 cd/㎡, an insulation resistance of 10,000 MΩ, and an insulation breakdown voltage of 500V, indicating excellent performance. This study confirms the potential of InZnP-based QDs as an environmentally friendly alternative to conventional Cd-based QDs. Furthermore, the integration of high-efficiency QD films with advanced heat-dissipating PCB technology is expected to improve traffic safety, particularly in low-visibility and nighttime environments

This study aimed to a sign device using quantum dot film. We synthesized quantum dots with an absolute quantum yield of more than 95% using the solution process method, coated the quantum dot film by mixing it with acrylate resin, made a sign device, and studied the improvement of visibility, and obtained the following conclusions. Quantum dots with absolute quantum yield of 97.63% at 535 nm and 97.85% at 615 nm were synthesized by doping InP with GaP and stacking ZnSe and ZnS composite shells. The synthesized quantum dots were mixed with acrylate syrup at a weight ratio of 10% to coat a film with a luminance uniformity of more than 95%, and the quantum dot film was attached to a luminous display with an insulation capacity of 500 V, an insulation resistance of 99.9 GΩ, and a luminance of 688.5 ㏅/㎠ at white region and 122.3 ㏅/㎠ at red region.