This study aimed to a sign device using quantum dot film. We synthesized quantum dots with an absolute quantum yield of more than 95% using the solution process method, coated the quantum dot film by mixing it with acrylate resin, made a sign device, and studied the improvement of visibility, and obtained the following conclusions. Quantum dots with absolute quantum yield of 97.63% at 535 nm and 97.85% at 615 nm were synthesized by doping InP with GaP and stacking ZnSe and ZnS composite shells. The synthesized quantum dots were mixed with acrylate syrup at a weight ratio of 10% to coat a film with a luminance uniformity of more than 95%, and the quantum dot film was attached to a luminous display with an insulation capacity of 500 V, an insulation resistance of 99.9 GΩ, and a luminance of 688.5 ㏅/㎠ at white region and 122.3 ㏅/㎠ at red region.
In this study, a mixed resin containing Bis-GMA was developed to produce a light-emitting sign using quantum dots. As a result of measuring the viscosity, color coordinates change, and luminance of the mixed resin, the following conclusions were obtained. The viscosity of the mixed resin decreased as the content of the diluent increased, and viscosity values ranged from 3,627 to 1,349cps showed as a result. The viscosity of the mixed resin decreased as the temperature increased, and the viscosity showed a value of 5,156 to 1,132cps. For the optical properties of InP/GaP/ZnSe/ZnS quantum dots, the absolute quantum efficiency was 91% at 522nm and 90% at 618nm when the gallium was 0.01%. The luminance of the light-emitting sign using the resin mixed with quantum dots was showed 142.6cd/m2 in white and 104.2cd/m2 in the red region.
AI-2.5wt%Li 합금을 시효처리하여 시효거동과 인장성질에 미치는 δ' 상의 영향을 조사하였다. δ' 상의 입자 반경은 시효 시간의 1/3승에 비례하여 조대화하였다. δ' 상과 기지상과의 계면에너지는 0.0073 J/m2, 확산계수는 1.42cm2/sec, 초대화 거동은 MLSW이론에 부합됨을 알 수 있었다. 미세하고 균일하게 분포한 δ'상은 전반적으로 인장강도의 상승을 가져왔으며, 평형상인 δ상의 석출과 이로 인한 무석출물대의 존재로 과시효시 강도가 감소하였다. 인장변형시 전위는 초전위로 아시효와 피크시효시에는 δ'상을 전단하지만 과시효시에는 δ'상을 전단하지 못하고 우회하여 전위루우프를 형성한다.