For use in ultrasonic actuators, we investigated the structural and piezoelectric properties of (1 - x)Pb(Zr0.515Ti0.485)O3 - xPb(Sb1/2Nb1/2)O3 + 0.5 wt% MnO2 [(1 - x)PZT - xPSN + MnO2] ceramics with a variation of x (x = 0.02, 0.04, 0.06, 0.08). All the ceramics, which were sintered at 1250˚C for 2 h, showed a typical perovskite structure, implying that they were well synthesized. A homogeneous micro structure was also developed for the specimens, and their average grain size was slightly decreased to 1.3μm by increasing x to 0.8. Moreover, a second phase with a pyrochlore structure appeared when x was above 0.06, which resulted in the deterioration of their piezoelectric properties. However, the 0.96PZT-0.04PSN+MnO2 ceramics, which corresponds with a morphotropic phase boundary (MPB) composition in the (1 - x)PZT - xPSN + MnO2 system, exhibited good piezoelectric properties: a piezoelectric constant (d33) of 325 pC/N, an electromechanical coupling factor (kp) of 70.8%, and a mechanical quality factor (Qm) of 1779. The specimens with a relatively high curie temperature (Tc) of 305˚C also showed a significantly high dielectric constant (εr) value of 1109. Therefore, the 0.96PZT - 0.04PSN + MnO2 ceramics are suitable for use in ultrasonic vibrators.

The effects of an addition of ZrO2 on the microstructure and electrical properties of MgO films as a protective layer for AC plasma display panels were investigated. MgO + a 200 ppm ZrO2 protective layer prepared by e-beam evaporation exhibited a secondary electron emission coefficient (γ) that was improved by 21% compared to that of a pure MgO protective layer. The relative density and Vickers hardness increased with a further addition of ZrO2. These results suggest that the discharge properties and optical properties of MgO protective layers are closely related to the relative density and Vickers hardness. The good optical and electrical properties of γ, at 0.080, a grain size of 19 μm and an optical transmittance of 91.93 % were obtained for the MgO + 200 ppm ZrO2 protective layer sintered at 1700˚C for 5 hrs.

클러스터형의 다중 공정용 장치에 부착키 위해 제작된 콘택 산화막 식각용 공정모듈에 대한 적정 식각 공정조건을 확립하기 위해, Taguchi 방법을 활용하여 공정최적화 실험을 수행하였다. Taguchi 실험은 2회에 걸쳐 시행되었는데, 제1차 실험은 장비변수에 대한 식각공정변수의 개괄적 거동을 타진하기 위함이었고, 제2차 실험은 상세 공정조건 확립을 위해서였다. 실험 및 분석 결과 CHF3/CF4 가스유량은 72/8sccm, 공정압력은 50 mTorr, RF 전력은 500 Watts, 자계강도는 90 Gauss일때 최적 공정 성능을 발휘함을 알 수 있다.