In this study, Ti-Mo-EB composites are prepared by ball milling and spark plasma sintering (SPS) to obtain a low elastic modulus and high strength and to evaluate the microstructure and mechanical properties as a function of the process conditions. As the milling time and sintering temperature increased, Mo, as a β-Ti stabilizing element, diffused, and the microstructure of β-Ti increased. In addition, the size of the observed phase was small, so the modulus and hardness of α-Ti and β-Ti were measured using nanoindentation equipment. In both phases, as the milling time and sintering temperature increased, the modulus of elasticity decreased, and the hardness increased. After 12 h of milling, the specimen sintered at 1000oC showed the lowest values of modulus of elasticity of 117.52 and 101.46 GPa for α-Ti and β-Ti, respectively, confirming that the values are lower compared to the that in previously reported studies.

In commercial solar cells, the pattern of the front electrode is critical to effectively assemble the photo generated current. The power loss in solar cells caused by the front electrode was categorized as four types. First, losses due to the metallic resistance of the electrode. Second, losses due to the contact resistance of the electrode and emitter. Third, losses due to the emitter resistance when current flows through the emitter. Fourth, losses due to the shading effect of the front metal electrode, which has a high reflectance. In this paper, optimizing the number of finger on a 4 ´ 4 solar cell is demonstrated with known theory. We compared the short circuit current density and fill factor to evaluate the power loss from the front metal contact calculation result. By experiment, the short circuit current density(Jsc), taken in each pattern as 37.61, 37.53, and 37.38 mA/ cm2 decreased as the number of fingers increased. The fill factor(FF), measured in each pattern as 0.7745, 0.7782 and 0.7843 increased as number of fingers increased. The results suggested that the efficiency(Eff) was measured in each pattern as 17.51, 17.81, and 17.84 %. Throughout this study, the short-circuit current densities(Jsc) and fill factor(FF) varied according to the number of fingers in the front metal pattern. The effects on the efficiency of the two factors were also investigated.

This paper presents the impact of partial shading on CuInxGa(1-x)Se2(CIGS) photovoltaic(PV) modules with bypass diodes. When the CIGS PV modules were partially shaded, the modules were under conditions of partial reverse bias. We investigated the characterization of the bypass diode and solar cell properties of the CIGS PV modules when these was partially shaded, comparing the results with those for a crystalline silicon module. In crystalline silicon modules, the bypass diode was operated at a partial shade modules of 1.67 % shading. This protected the crystalline silicon module from hot spot damage. In CIGS thin film modules, on the other hand, the bypass diode was not operated before 20 % shading. This caused damage because of hotspots, which occurred as wormlike defects in the CIGS thin film module. Moreover, the bypass diode adapted to the CIGS thin film module was operated fully at 60% shading, while the CIGS thin film module was not operated under these conditions. It is known that the bypass diode adapted to the CIGS thin film module operated more slowly than that of the crystalline silicon module; this bypass diode also failed to protect the module from damage. This was because of the reverse saturation current of the CIGS thin film, 1.99 × 10−5 A/cm2, which was higher than that of crystalline silicon, 8.11 × 10−7 A/cm2.

The use of solar energy generation is steadily increasing, and photovoltaic modules are connected in series to generate higher voltage and power. However, solar panels are exposed to high-voltage stress (up to several hundreds of volts) between grounded module frames and the solar cells. Frequent high-voltage stress causes a power-drop in the modules, and this kind of degradation is called potential induced degradation (PID). Due to PID, a significant loss of power and performance has been reported in recent years. Many groups have suggested how to prevent or reduce PID, and have tried to determine the origin and mechanism of PID. Even so, the mechanism of PID is still unclear. This paper is focused on understanding the PID of crystalline-silicon solar cells and modules. A background for PID, as well as overviews of research on factors accelerating PID, mechanisms involving sodium ions, PID test methods, and possible solutions to the problem of PID, are covered in this paper.

When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minority-carrier diffusion-length with internal quantum efficiency (IQE) analysis.

The CdS thin film used as a window layer in the CdTe thin film solar cell transports photo-generated electrons to the front contact and forms a p-n junction with the CdTe layer. This is why the electrical, optical, and surface properties of the CdS thin film influence the efficiency of the CdTe thin film solar cell. When CdTe thin film solar cells are fabricated, a heat treatment is done to improve the qualities of the CdS thin films. Of the many types of heat treatments, the CdCl2 heat treatment is most widely used because the grain size in CdS thin films increases and interdiffusion between the CdS and the CdTe layer is prevented by the heat treatment. To investigate the changes in the electrical, optical, and surface properties and the crystallinity of the CdS thin films due to heat treatment, CdS thin films were deposited on FTO/glass substrates by the rf magnetron sputtering technique, and then a CdCl2 heat treatment was carried out. After the CdCl2 heat treatment, the clustershaped grains in the CdS thin film increased in size and their boundaries became faint. XRD results show that the crystallinity improved and the crystalline size increased from 15 to 42 nm. The resistivity of the CdS single layer decreased from 3.87 to 0.26 Ωcm, and the transmittance in the visible region increased from 64% to 74%.

본 연구는 유기 EL의 기초연구로서， 특히 분자중심에 카르보닐기 혹유 산소원자를 갖는 히드라존계열의 유기형광체를 합성한 후, 얻어진 물질의 특정을 연구한 것이다. 본 연구에서는 알데히드류(p- 디에틸아미노벤즈알데히드， p-디에틸아미노벤즈알데히드，4-디페닌아미노벤즈알데히드)와 아민류(4.4' -디아미노벤조페논， 4-아마노페널에테르)를 반응시켜 합성하였다. 본 연구에서 합성한 형광체는 FT -IR, H-NMR분석에 의하여 그 구조를 확인했으며，열안정성，반응성 및 PL특성은 융점，수득율 및 발광스펙트럼측정으로 확인하였다. 본 연구에서 합성한 유기형광체의 발광스펙트럼은 564-596nm(오렌지색)과 612-681nm(적색)으로 확인되었다.

This study comprehends that the landscape of Ipsan Village is the accumulated output of the landscape management and social behavior by the historic personages through the reference research and field surveys. And the study sorted out the over-layered landscape characteristics of Ipsan Village by analyzing the dispersed landscape elements as follows. First, right before the start of Japanese invasions to Korea(1592–98), Tamjin(耽津) An(安) Family moved into Ipsan and started establishing the a single clan village. At a site with mountain background and facing the water(背山臨水), the village used to be a typical farming one with an organically planned road-system and housing area following the traditional order. However, the landscape has changed drastically since the 20th century with the construction of banks, roads and readjustment of arable land etc. Second, the original landscape, which can be figured out through the ‘Gosanjaesibyukgyeong(高山齋十六景)’ in the 18th century, shows its harmony with natural landscape: mountain & valley, stream & field, traditional trees, etc, cultural landscape: village, well, spring, etc, and momentary landscape: seasons, time, weather phenomena, sound, behavior, etc. Third, based on the second, 16 natural landscape elements: mountain & stream, planting, etc. and 25 cultural landscape elements: housing spaces, self-cultivation & ceremony spaces, community spaces and modern education & enlightenment spaces were selected and interpreted as landscaping meanings. Fourth, the over-layered landscape which stems from the compositive functions and inter-connectivity of landscape elements which consists Ipsan Village is regarded as ‘Natural geographical and Fungsu landscape’, ‘Rural production and livelihood landscape’, ‘Confucian ceremony and symbolic landscape’ and ‘Modern education and enlightenment landscape.’

아스코르빅산(비타민 C)은 수용액상에서 공기와 빛, 알칼리 등에 의해 쉽게 불안정화되는 성질이 있어 화장품에 적용에 있어서 제한적이다. 아스코르빅산은 수용액상에서 불안정성에 영향을 주는 가장 중요한 인자인 공기, 특히 산소와 열, 빛 등의 외부환경에 민감하게 반응하여 산화에 의해 쉽게 분해되는 문제점이 있다. 본 연구에서는 이러한 아스코르빅산의 안정성을 증가시키고자 폴리올과 유화방법을 변화시켜 안정화하는 연구를 수행하였고 실온과 고온에서 색상과 아스코르빅산의 함량변화를 HPLC로 측정하여 비교하였다. 그 결과 실험한 조건들 중 폴리올은 글리세린을 사용한 경우 아스코르빅산의 안정화 가장 좋았으며 비수유화방법을 사용한 경우에 있어서 가장 안정하였다. 이러한 결과들로부터 아스코르빅산이 본 실험의 비수유화로 안정성이 증가하며 안정한 화장품을 만드는 데 적용이 가능하다.