The effect of a-sexithiophene(α-6T) layers on the light emitting diode (LED) were studied. The α-6T was used for a buffer layer in electroluminescent (EL) devices. Enhanced carrier (hole) injection and improved emission efficiency were observed. Carrier injection characteristics were investigated as a function of α-6T later thickness. The efficiency of the electroluminescence was proportional to the thickness of α-6T layer. The highest efficiency was observed 600A of α-6T later, which was about 1.5 times higher than that of device without α-6T later. The device with a-6T showed an operation voltage lowered by 2V. The α-6T layer can substitute hole blocking layer, and control charge injection properties.