A thin Cu seed layer for electroplating has been employed for decades in the miniaturization and integration of printed circuit board (PCB), however many problems are still caused by the thin Cu seed layer, e.g., open circuit faults in PCB, dimple defects, low conductivity, and etc. Here, we studied the effect of heat treatment of the thin Cu seed layer on the deposition rate of electroplated Cu. We investigated the heat-treatment effect on the crystallite size, morphology, electrical properties, and electrodeposition thickness by X-ray diffraction (XRD), atomic force microscope (AFM), four point probe (FPP), and scanning electron microscope (SEM) measurements, respectively. The results showed that post heat treatment of the thin Cu seed layer could improve surface roughness as well as electrical conductivity. Moreover, the deposition rate of electroplated Cu was improved about 148% by heat treatment of the Cu seed layer, indicating that the enhanced electrical conductivity and surface roughness accelerated the formation of Cu nuclei during electroplating. We also confirmed that the electrodeposition rate in the via filling process was also accelerated by heat-treating the Cu seed layer.

The effect of a-sexithiophene(α-6T) layers on the light emitting diode (LED) were studied. The α-6T was used for a buffer layer in electroluminescent (EL) devices. Enhanced carrier (hole) injection and improved emission efficiency were observed. Carrier injection characteristics were investigated as a function of α-6T later thickness. The efficiency of the electroluminescence was proportional to the thickness of α-6T layer. The highest efficiency was observed 600A of α-6T later, which was about 1.5 times higher than that of device without α-6T later. The device with a-6T showed an operation voltage lowered by 2V. The α-6T layer can substitute hole blocking layer, and control charge injection properties.

플라즈마 침탄한 저 탄소 Cr-Mo 강(0.176C-1.014Cr-0.387Mo)의 침탄 특성과 피로성질을 고찰하였다. 플라즈만 침탄한 시편의 유효경화깊이는 가스 침탄한 시편에 대해 상대적으로 침타나시간이 짧고 침탄온도가 낮음에도 불구하고 50%정도까지 증가되었다. 플라즈만 침탄시 유효경화깊이의 증가는 표면탄소농도의 증가와 같은 경향을 보였으며, 표면탄소농도의 증가와 같은 경향을 보였으며, 표면탄소농도의 증가율이 침탄시간의 증가에 따라 감소하였다. 플라즈만 침탄간의 피로한도는 가스 침탄강의 경우보다 높았다. 이를 표면근처의 미세구조, 경화깊이 잔류, 오스테나이트와 압축잔류응력으로 조사한 결과 경화깊이와 압축잔류응력의 차이가 거의 없었다. 따라서 플라즈만 침탄의 피로강도 향상은 가스침탄에 비해 표면이 상승층이 저감되어 표면에서의 미소균열의 발생 및 초기 균열 전파과정이 지연 되어진 것으로 판단된다. 파단면 관찰결과 표면에서 균열이 시작되고 플라즈마 침탄의 경우 입내파괴가 현저하였다.

The tfTZ(4,4',4"-trifluoro-triazine) was used as a hole blocking material for the electroluminescent devices(ELDs) in this study. In general, the holes are outnumbered the electrons in hole transport and emitting layers because the hole transport is more efficient in most organic ELDs. The hole blocking layer are expected to control the excess holes to increase the recombination of holes and electrons and to decrease current density. The former study using the 2,4,6-triphenyl-1,3,5-triazine(TTA) as hole blocking layer showed that the TTA did not form stable films with vapor deposition technique. The tfTZ can generate stable evaporated films, moreover the fluorine group can lower the highest occupied molecular orbital(HOMO) level, which produces the energy barrier for the holes. The tfTZ has high electron affinities according to the data by the Cyclic-Voltammety(CV) method, which is developed for the measurement of HOMO and lowest occupied molecular orbital(LUMO) level of organic thin films. The lowered HOMO level is made the tfTZ to be applied for a hole blocking layer in ELDs. We fabricated multilayer ELDs with a structure of ITO/hole blocking layer(HBL)/hole transporting layer(HTL)/emitting layer/electrode. The hole blocking properties of this devices is confirmed from the lowered current density values compared with that without hole blocking layer.

Interfacial properties of electrode and organic thin layer is one of the most important factor in performing a Light Emitting Diodes(LED). Phthalocyanine copper was used as a buffer layer to improve interface characteristic, so that device efficiency was improved. In this study, LEDs were fabricated as like structures of Indium-Tin-Oxide (ITO) / N,N' -Diphenyl-N,N'-di(m-tolyl)-benzidine (TPD) / 8-Hydroxyquinoline aluminum(Alq) / Aluminum(Al) and Indium-Tin-Oxide(ITO) / N,N'-Diphenyl-N,N' -di(m-tolyl)-benzidine(TPD) / 2-(4-Biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole(PBD) / Aluminum(Al). In these devices, CuPC was layered at electrode/organic layer interface. As position is changing and thickness is changing, devices showed characteristic luminescence efficiency and luminescence inensity respectively. We showed in this study that luminescence efficiency was improved with CuPC layer in LEDs. The efficiency of device with layer CuPC is higher than that of 2 layer CuPC. However, the luminescence of 2 layer CuPC device got higher value.

The N-docosyl N'-methyl viologen-(TCNQ)2, (DMVT) was synthesized. We investigated the π-A isotherm of DMVT to find the optimal deposition condition. Temperature-dependent current-voltage characteristics of the DMVT LB films shows that there is an increase in conductivity at 330K or so. The in-plane electrical conductivity at room temperature is in the range of 10-7~10-6S/cm. From the plot of logarithmic conductivity as a function of reciprocal temperature, two types of activation energies, 0.04eV and 0.73eV, were obtained depending on the temperature range. The Ohmic behaviour was observed below 0.6V and the Schottky effect was confirmed at 2.5~6V, when the I-V characteristics was measured with Al/LB film/Al structure. I-V measurement for Al/LB film/ITO structure showed the asymmetrical I-V relationship, which resulted from the rectification property.

Photo-crosslinkable polyimide(PI) which contains CF3 moiety was synthesized. Polarized UV light transformed ketone group of PI to hydroxyl group, which was confirmed by IR and UV-visible spectroscopy. We investigated the dichroic UV-absorption before and after photo-reaction with linearly polarized light. In particular we have attempted to clarify the relationship between the anisotropy of surface region and surface azimuthal anchoring energy and knew that the anchoring energy of photo-alignment PI is comparable with that of mechanical rubbing.

Organic-based electroluminescent devices have attracted lots of interests because of their possible application as a large-area flat panel display. Polyimides have been used for photo-alignment in LCD(Liquid Crystal Display). However, the devices used in this study were fabricated with polyimide doped with N,N'-Diphenyl-N,N'-di(m-tolyl)-benzidine(TPD) (3, 10, 30wt%) for electroluminescent hole tranforting layer(EHTL). The photochemical and physical properties of EHTL was studied. The film thicknesses were reduced under illumination with UV light. Polyimide films doped with TPD(3wt%) was irradiated and the electrical properties of the films were studied.

The polyimide film surface was modified with KOH aqueous solutions or sulfuric acid. The film thickness was increased by about 10% through the modification of film surface. Hydrolysis of amide bonds and hydration of water induced the increase. The polarity of the film surface increased and identified by contact angle measurement. The depth and roughness of modified was increased. After treatment of surface with water, alkyl and 4-pentyloxyaniline were introduced on the film surface by complex formation between anionic species formed on the imide surface and ammonium ion. The newly introduced alkyl group was identified by FT-IR spectroscopy. Surface polarity reduced dramatically and the roughness was increased after introduction of ammonium salt.

Ultra thin films of Tetra-3-hexadecylsulphamoylcopperphthalocyanine(HDSM-CuPc) were formed on various substrates by Langmuir-Blodgett method, where HDSM-CuPc was synthesized by attaching long-chain alkylamine(hexa-decylamine) to CuPc. The reaction product was identified with FT-IR, UV-visible absorption spectroscopies, elemental analysis and thin layer chromatography. The formation of Ultrathin Langmuir-Blodgett(LB) films of HDSM-CuPc was confirmed by FT-IR and UV-visible spectroscopies. A quartz piezoelectric crystal coated with LB films of HDSM-CuPc was examined as a gas sensor for N02 gas. HDSM-CuPc LB films were transferred to a quartz crystal microbalance(QCM) in the form of Z-type multilayers. Response characteristics of film-coated QCM to NO2 gas concentrations over a range of 100~600ppm have been tested with a thickness of 5~20 layers of HDSM-CuPc. Changes in frequency by adsorption of NO2 were increased With the number of LB layers and NO2 concentration, but the response time was slow.