We demonstrate the luminosity dependence of the covering factor (CF) of active galactic nuclei (AGNs), based on AKARI mid-infrared all-sky survey catalog. Combining the AKARI with Sloan Digital Sky Survey (SDSS) spectroscopic data, we selected 243 galaxies at 9 m and 255 galaxies at 18 m. We then identied 64 AGNs at 9 μm and 105 AGNs at 18 μm by their optical emission lines. Following that, we estimated the CF as the fraction of type 2 AGN in all AGNs. We found that the CF decreased with increasing 18 μm luminosity, regardless of the choice of type 2 AGN classification criteria.

We determined the warp parameters of 192 warped galaxies which are selected from 340 edge-on galaxies using color images as well as r-band isophotal maps. We derive the local background density (∑ n) to examine the dependence of the warp amplitudes on the galaxy environment. We find a clear trend that strongly warped galaxies are likely to be found in high density regions where tidal interactions are supposed to be frequent. However, the correlation between αω and ∑ n is too weak for weakly warped galaxies (αω < 4◦) and the cumulative distributions of weakly warped galaxies are not significantly different from those of galaxies with no detectable warps. This suggests that tidal interactions do not play a decisive role in the formation of weak warps.

목 적: 화학수송법으로 성장시킨 Ga2Se3 및 Ga2Se3 : Co2+ 단결정의 광학적 에너지 띠 간격 energy band gap의 온도의존성을 규명하고, 이로부터 기초적 열역학 함수를 추정고자 한다. 방 법: gallium(99.9999 %, 2 mol), selenium(99.9999 %, 3 mol), cobalt(99.99 %, 0.1 mol %) 그리고 수송물질로 iodine(99.99 %, 6 mg/cm3)을 함께 석영관에 넣고 내부를 5×10-6 torr로 유지하면서 봉입하여 성장용 ampoule을 만들었다. 성장용 ampoule을 2단 전기로의 중앙에 위치시키고, 결정 성장측의 잔류불순 물을 깨끗이 제거한 후, 시료 출발측을 890 ℃, 성장측을 780 ℃로 6일간 유지하여 단결정을 성장시켰다. 기초 흡수단 부근에서 에너지 띠 간격의 온도의존성을 구하기 위하여 저온장치(Air Products, SH-4)가 부 착된 UV-VIS-NIR spectrophotometer(Hitachi, U-3501)를 사용하여 광흡수 스펙트럼을 측정하였다. 결과 및 고찰: Ga2Se3 및 Ga2Se3 : Co2+ 단결정들의 광흡수 스펙트럼은 순수한 Ga2Se3 단결정의 경우 570 nm영역에서, Ga2Se3 : Co2+ 단결정의 경우 594 nm영역에서 광흡수가 급격히 증가하여 cobalt를 첨가한 단 결정의 기초 흡수단이 장파장 측으로 이동됨을 볼 수 있었다. 또한 에너지 띠 간격의 온도의존성은 Varshni 가 제안한 실험식으로부터 구하였다. 결 론: 성장된 단결정의 구조는 cubic구조이었고, 이들의 격자상수 값은 Ga2Se3 및 Ga2Se3 : Co2+ 단결정 들에 대하여 각각 a = 5.442 Å, a = 5.672 Å이었다. 광흡수 스펙트럼으로부터 구한 optical energy band gap(Eg)의 band구조는 직접 전이형이었고, 에너지 띠 간격의 온도의존성은 Varshni방정식이 잘 적용되었 다. 이때 구한 상수 값은 Ga2Se3 단결정의 경우 Eg(0) = 2.177 eV, α= 7.8×10-4eV/K, β= 378 K로 주어 지고, Ga2Se3 : Co2+단결정의 경우 Eg(0) = 2.089 eV, α= 1.20×10-3 eV/K, β= 349 K로 주어졌다. 이들 값 으로부터 구한 에너지 띠 간격의 온도의존성으로부터 열역학 함수인 entropy(SCV), heat capacity(CCV), enthalpy(HCV) 값을 추정할 수 있었다.

The paper addresses the phenomenon of the opportunism that arises from a parent (principal) toward an IJV (agent) and its antecedents. This study integrates Agency Theory and Resource Dependence Theory (RDT) to discover its determinants from the perspectives of principal opportunism. Using Structural Equation Modelling (SEM) techniques and fuzzy-set qualitative comparative analysis (fsQCA) based on a sample of 185 Chinese-foreign IJVs in China, which are useful to reals the overall story of the principal opportunism. This study finds an IJV depends on parents’ support in both knowledge- and property-based resources has more chances to subject to principal opportunism. The result also indicates that psychic distance has a negative impact on principal opportunism. fsQCA, however, provides further solutions that the specific combinations of these predictors or their negation predicts principle opportunism.

This paper introduces the existence of purchase dependence that was identified during the analysis of inventory operations practice at a sales agency of dealing with spare parts for ship engines and generators. Purchase dependence is an important factor in designing an inventory replenishment policy. However, it has remained mostly unaddressed. Purchase dependence is different from demand dependence. Purchase dependence deals with the purchase behavior of customers, whereas demand dependence deals with the relationship between item-demands. In order to deal with purchase dependence in inventory operations practice, this paper proposes (Q, r) models with the consideration of purchase dependence. Through a computer simulation experiment, this paper compares performance of the proposed (Q, r) models to that of a (Q, r) model ignoring purchase dependence. The simulation experiment is conducted for two cases : a case of using a lost sale cost and a case of using a service level. For a case of using a lost sale cost, this paper calculates an order quantity, Q and a reorder point, r using the iterative procedure. However, for a case of using a service level, it is not an easy task to find Q and r. The complexity stems from the interactions among inventory replenishment policies for items. Thus, this paper considers the genetic algorithm (GA) as an optimization method. The simulation results demonstrates that the proposed (Q, r) models incur less inventory operations cost (satisfies better service levels) than a (Q, r) model ignoring purchase dependence. As a result, the simulation results supports that it is important to consider purchase dependence in the inventory operations practice.

HPGe 검출기를 이용하여 밀도가 다양한 환경시료에 대한 정밀 분석시 정확한 분석을 위해서는 밀도보정인자가 필요하다. 밀도에 대한 보정인자를 구하기 위해서 본 연구에서는 몬테카를로 코드인 MCNPX 코드를 사용하여 크리스털의 높이, 지름 및 코어의 크기와 같은 특성이 다른 세 대의 p-type HPGe 검출기를 모사하고 밀도 1 g/cm3의 교정용 표준시료를 이용하여 모 델링을 검증하였다. 검증을 통하여 모델링을 확정한 후 0.3, 0.6, 0.9, 1.0, 1.2, 1.5 g/cm3 밀도를 가진 샘플에 대한 효율을 시 뮬레이션하고 밀도보정인자를 도출하였다. 도출된 각 검출기에 대한 밀도보정인자를 비교하였을 때 전 에너지 범위에서 그 차이가 거의 없음을 확인하였으며 이는 검출기의 크리스털과 같은 주요 특성에 대해 밀도보정인자가 독립적임을 의미한다.

How galaxy evolution diers in dierent environments is one of the intriguing questions in the study of structure formation. While galaxy properties are clearly distinguished in different environments in the local universe, it is still an open issue what causes this environmental dependence of various galaxy properties. To address this question, in this work, we investigate the build-up of passive galaxies over a wide redshift range, from z ~ 2 to z ~ 0.5, focusing on its dependence on galaxy environment. In the UKIDSS/Ultra Deep Survey (UDS) field, we identify high-redshift galaxy cluster candidates within this redshift range. Then, using deep optical and near-infrared data from Subaru and UKIRT available in this field, we analyze and compare the stellar population properties of galaxies in the clusters and in the field. Our results show that the environmental effect on galaxy star-formation properties is a strong function of redshift as well as stellar mass | in the sense that (1) the effect becomes signicant at small redshift, and (2) it is stronger for low-mass (M* < 1010M⊙) galaxies. We have also found that galaxy stellar mass plays a more significant role in determining their star-formation property — i.e., whether they are forming stars actively or not — than their environment throughout the redshift range.

본 연구의 목적은 통항분포함수 계산 시 적용하는 기준선의 방향과 기준점의 수평위치 및 수직위치에 따라서 통항분포함수가 변하는 양상을 식별하기 위한 것이다. 목포항 입구에 있는 항로를 대상으로 2013년 1월달의 AIS 실측자료를 이용하여 기준선의 방향(θ), 수평위치(ℒH) 및 수직위치(ℒV) 등의 3가지 변수가 통항분포함수의 평균(χ)과 표준편차(δ)에 미치는 영향을 실험하였다. 실험결과, θ에 따라 추출되는 샘플 데이터가 달라지기 때문에 θ의 변화에 따라서 χ와 δ가 변화됨을 나타냈고, θ에 따른 χ와 δ의 변화는 사인(sine)함수 합의 관계로 도출되었다. 또한 항로가 복잡한 해역에서 최적의 통항분포함수를 결정하기 위해서는 의 변화 값이 최소가 되는 θ을 기준선의 방향으로 설정하는 것이 타당함을 알았다. 본 연구의 결과는 정규분포가 보다 더 정량화된 수치로 표현되어 해상교통흐름을 파악하고 해상교통안전관리 의사결정을 위한 기초자료로 활용될 것으로 판단된다.

Solar cells exhibit different power outputs in different climates. In this study, the temperature dependence of open-circuit voltage(V-oc), short-circuit current(I-sc), fill factor(FF) and the efficiency of screen-printed single-crystal silicon solar cells were studied. One group was fabricated with homogeneously-doped emitters and another group was fabricated with selectively-doped emitters. While varying the temperature (25, 40, 60 and 80˚C), the current-voltage characteristics of the cells were measured and the leakage currents extracted from the current-voltage curve. As the temperature increased, both the homogeneously-doped and selectively-doped emitters showed a slight increase in I-sc and a rapid degradation of V-oc. The FF and efficiency also decreased as temperature increased in both groups. The temperature coefficient for each factor was calculated. From the current-voltage curve, we found that the main cause of V-oc degradation was an increase in the intrinsic carrier concentration. The temperature coefficients of the two groups were compared, leading to the idea that structural effects could also affect the temperature dependence of current-voltage characteristics.