In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ±0.006℃ at 800℃, temperature uniformity for graphite boat around was within ±0.15℃ at 650℃, and cooling rate was controllable from 2.2℃/min to 0.05℃/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.

A Satellite -aided search and rescue system is expected for its many advantage of global coverage, instantaneousness and low cost. In this paper, a calculation method is proposed , by which a position of distress can be determined with doppler frequency received through an orbital satellite. First, an algorithm and program is developed for calculating the position of distress with the received doppler frequency of EPIRB(Emergency Position Indicating Radio Beacon) with the least square method. Then, position error caused by the drift of the transmitting frequency is evaluated. The evaluation is made by the simulation using NNSS satellite orbital elements and varying position of EPIRB, numbers of Doppler data and magnitudes of various errors. As the result, the availability of this program for a satellite-aided search and rescue system is confirmed and the bounds of expected positioning accuracy is clarified.