This study analyzes performance-cost ratio of various polycarbonate(PC) pigpen. The finite element models using the ANSYS program described in this paper is attractive not only because it shows excellent accuracy in analysis but also it shows the benefit of parameter study by using APDL. We have performed various parameter study of total 6 models. And we compared and analyzed the results of 6 models. From the numerical examples, we recommend model M2. Model M2 is PC pigpen with steel in PC.

This study analyzes performance-weight ratio of polycarbonate(PC) pigpen and steel pigpen. The finite element models using the ANSYS program described in this paper is attractive not only because it shows excellent accuracy in analysis but also it shows the benefit of parameter study by using APDL. We have performed a parameter study by the width variation of PC pigpen. And we compared and analyzed the results of PC pigpen and steel pigpen. From the numerical examples, we confirmed the validity of PC pigpen.

We report on the capacitively coupled O2 plasma etching of PMMA and polycarbonate (PC) with a diffusion pump. Plasma process variables were process pressure and CCP power at 5 sccm O2 gas flow rate. Characterization was done in order to analyze etch rate, etch selectivity, surface roughness, and morphology using stylus surface profilometry and scanning electron microscopy. Self bias decreased with increase of process pressure in the range of 25~180 mTorr. We found an important result for optimum pressure for the highest etch rate of PMMA and PC, which was 60 mTorr. PMMA and PC had etch rates of 0.46 and 0.28 μm/min under pressure conditions, respectively. More specifically, etch rates of the materials increased when the pressure changed from 25 mTorr to 60 mTorr. However, they reduced when the pressure increased further after 60 mTorr. RMS roughnesses of the etched surfaces were in the range of 2.2~2.9 nm. Etch selectivity of PMMA to a photoresist was ~1.5:1 and that of PC was ~0.9:1. Etch rate constant was about 0.04 μm/minW and 0.02 μm/minW for PMMA and PC, respectively, with the CCP power change at 5 sccm O2 and 40 mTorr process pressure. PC had more erosion on the etched sidewall than PMMA did. The OES data showed that the intensity of the oxygen atomic peak (777.196 nm) proportionally increased with the CCP power.