To increase the capacitance of an Al electrolytic capacitor, the anodic oxide film, Al2O3, was partly replaced by an Al2O3-ZrO2 (Al-Zr) composite film prepared by the vacuum infiltration method and anodization. The microstructure and composition of the prepared samples were investigated by scanning electron microscopy and transmission electron microscopy. The coated and anodized samples showed multi-layer structures, which consisted of an inner Al hydrate layer, a middle Al- Zr composite layer, and an outer Al2O3 layer. The thickness of the coating layer could go up to 220 nm when the etched Al foil was coated 8 times. The electrical properties of the samples, such as specific capacitance, leakage current, and withstanding voltages, were also characterized after anodization at 100 V and 600 V. The capacitances of samples with ZrO2 coating were 36.3% and 27.5% higher than those of samples without ZrO2 coating when anodized at 100 V and 600 V, respectively.

The oxide films formed on etched aluminum foils play an important role as dielectric layers in aluminum electrolytic capacitors. Y2O3-doped ZrO2 (YZ) films were coated on the etched aluminum foils by sol-gel dip coating, and the electrical properties of YZ-coated Al foils were characterized. YZ films annealed at 450 oC were crystallized into a cubic phase, and as the Y2O3 doping content increased, the unit cell of ZrO2 expanded and the grain size decreased. The etch pits of Al foils were filled by YZ sol when it dried at atmospheric pressure after repeating for several times, but this step could essentially be avoided when being dried in a vacuum. YZ-coated foils indicated that the specific capacitance and dissipation factor were 2-2.5 μF/cm2 and 2-4 at 1 kHz, respectively, and the leakage current and withstanding voltage of films approximately 200 nm thick were 5 × 10−4A at 21 V and 22 V, respectively. After being anodized at 500 V, the foils exhibited a specific capacitance and dissipation factor of 0.6-0.7 μF/cm2 and 0.1-0.2, respectively, at 1 kHz, while the leakage current and withstanding voltage were 2 × 10−4 - 3 × 10−5 A at 400 V and 420-450 V, respectively. This suggests that YZ film is a promising dielectric that can be used in high voltage Al electrolytic capacitors.

전해콘텐서용 알루미늄박을 ammonium adipate 용액을 이용하여 65˚C에서 10분간 100V 및 140V로 각각 양극 산화시켜 산화 알루미늄 유전체를 만들었다. 유전층의 두께, 화학양론적 관계, 결정구조 등을 RBS 및 TEM을 이용하여 분석하였고, 알루미늄박의 에칭시 황산 첨가로 인한 표면적의 변화는 임피던스 분석법으로 조사 하였다. 생성된 유전피막은 100V 및 140V의 전압을 사용했을 경우 각각 약 130nm 및 190nm 두께의 비정질로 나타났으며 피막의 알루미늄과 산소원소의 화학양자론적 비는 약 2:3의 비율로 존재했다. 또한 유전피막은 전자빔은 조사에 의해 쉽게 γ-Al2</TEX>O3 형태의 결정질로 변태 되었다. 염산 에칭욕에 황산 첨가시 나타나는 알루미늄박의 표면변화는 임피던스 분석결과와 정전 용략의 변화가 일치하는 경향을 나타냈다.

전해콘텐서용 알루미늄박의 직류에칭에서 1M 염산욕에 부식억제제로 1M 황산을 첨가했을 때의 영향을 조사하기 위하여 에치 피트의 밀도, 에치 터널의 길이와 직경, 정전 용량 등의 변화를 분석하였다. 황산이온은 부식억제제로서 염소이온보다 시료의 표면에서 에치 피트의 밀도를 증가시키며 에치 터널의 직경은 감소하나 길이를 증가시킴으로써 전체적으로 표면적이 커지고 또한 정전 용량 값이 증가하였다. 황산이온을 첨가하였을 경우 전류 밀도가 0.9A/cm2 보다 낮은 경우에는 정전 용량 값이 작지만 그 이상에서는 정전용량이 현저하게 증가하였다.