As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 °C The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

Continuous synthesis of high-crystalline carbon nanotubes (CNTs) is achieved by reconfiguring the injection part in the reactor that is used in the floating catalyst chemical vapor deposition (FC-CVD) process. The degree of gas mixing is divided into three cases by adjusting the configuration of the injection part: Case 1: most-delayed gas mixing (reference experiment), Case 2: earlier gas mixing than Case 1, Case 3: earliest gas mixing. The optimal synthesis condition is obtained using design of experiment (DOE) in the design of Case 1, and then is applied to the other cases to compare the synthesis results. In all cases, the experiments are performed by varying the timing of gas mixing while keeping the synthesis conditions constant. Production rate (Case 1: 0.63 mg/min, Case 2: 0.68 mg/min, Case 3: 1.29 mg/min) and carbon content (Case 1: 39.6 wt%, Case 2: 57.1 wt%, Case 3: 71.6 wt%) increase as the gas-mixing level increases. The amount of by-products decreases stepwise as the gas-mixing level increases. The IG/ID ratio increases by a factor of 7 from 10.3 (Case 1) to 71.7 (Case 3) as the gas-mixing level increases; a high ratio indicates high-crystalline CNTs. The radial breathing mode (RBM) peak of Raman spectrograph is the narrowest and sharpest in Case 3; this result suggests that the diameter of the synthesized CNTs is the most uniform in Case 3. This study demonstrates the importance of configuration of the injection part of the reactor for CNT synthesis using FC-CVD.