Bentonite is a widely used buffer material in high-level radioactive waste repositories due to its favorable properties, including its ability to swell and low permeability. Bentonite buffers play an important role in safe disposal by providing a low permeability barrier and preventing radionuclides migration into the surrounding rock. However, the long-term performance of the bentonite buffer is still an area of research, and one of the main concerns is the erosion of the buffer due to swelling and groundwater flow. Erosion of the bentonite buffer can have a significant impact on repository safety by reducing the integrity of the buffer and forming colloids that can transport radionuclides through groundwater, potentially increasing the risk of radionuclide migration. Therefore, understanding the mechanisms and factors that influence the erosion of the bentonite buffer is critical to the safety assessment of high-level radioactive waste repositories. In this study, we attempted to develop the bentonite buffer erosion model using Adaptive Processbased total system performance assessment framework for a geological disposal system (APro) proposed by the Korea Atomic Energy Research Institute (KAERI). First, the erosion phenomenon was divided into two stages: bentonite buffer penetration into rock fractures and colloid formation. As an initial step in the development of the buffer erosion model, a bentonite buffer intrusion into the fracture and consequent degradation of buffer property were considered. For this purpose, a tworegion model based on the dynamic bentonite diffusion model was adopted which is one of the methods for simulating bentonite buffer intrusion. And, it was assumed that the buffer properties, such as density, porosity and permeability, thermal conductivity, modulus of elasticity, and mechanical strength, are degraded as the buffer erodes. The bentonite buffer degradation model developed in this study will serve as a foundation for the comprehensive buffer erosion model, in conjunction with the colloidal formation model in the future.

To decrease area of the repository for high-level radioactive waste, enhancing the disposal efficiency is needed for public acceptance. Previous studies regarding the performance assessment of KRS and KRS+ repository did not consider area-based variations of the geothermal gradient and rock thermal properties in Korea. This research estimated deposition hole spacing based on performance assessment of a repository using the distribution of geothermal gradient and rock thermal properties in Korea to increase disposal efficiency. Distributions of geothermal gradient, rock thermal properties were investigated based on 2019 Korea geothermal atlas published by Korea Institute of Geoscience and Mineral Resources (KIGAM). Effect of thermal performance parameters was analyzed using coupled thermal-hydraulic numerical simulations, and effect of rock thermal conductivity and deposition hole spacing on the maximum temperature of buffer was relatively large. In addition, distribution maps of thermal performance of a repository and deposition hole spacing were plotted using thermal performance parameters-maximum temperature of buffer regression equations and GIS data given by KIGAM. In the regions showing the highest maximum temperature of buffer in Korea, required deposition hole spacings were 10.5 m, 10.0 m, 10.1 m, respectively for KJ-II, MX-80, and FEBEX bentonite cases, and thereby additional disposal area of 40%, 33.3%, and 34.7% were required compared to that of the KRS+ repository. On the other hand, high disposal efficiency can be obtained in the regions showing the low maximum temperature of bentonite buffer. The methodology provided in this research can be used as one of the references for the selection of domestic candidate repository sites. Additional mechanical performance analysis should be conducted using distributions of mechanical properties of rock mass in Korea.

Silicon heterojunction solar cells can achieve high conversion efficiency with a simple structure. In this study, we investigate the passivation characteristics of VOx thin films as a hole-selective contact layer using ALD (atomic layer deposition). Passivation characteristics improve with iVoc (implied open-circuit voltage) of 662 mV and minority carrier lifetime of 73.9 μs after post-deposition annealing (PDA) at 100 oC. The improved values are mainly attributed to a decrease in carbon during the VOx thin film process after PDA. However, once it is annealed at temperatures above 250 oC the properties are rapidly degraded. X-ray photoelectron spectroscopy is used to analyze the chemical states of the VOx thin film. As the annealing temperature increases, it shows more formation of SiOx at the interface increases. The ratio of V5+ to V4+, which is the oxidation states of vanadium oxide thin films, are 6:4 for both as-deposition and annealing at 100 oC, and 5:5 for annealing at 300 oC. The lower the carbon content of the ALD VOx film and the higher the V5+ ratio, the better the passivation characteristics.