We develop a purification process of Hg2Br2 raw powders using a physical vapor transport(PVT) process, which is essential for the fabrication of a high performance acousto-optic tunable filter(AOTF) module. Specifically, we characterize and compare three Hg2Br2 powders: Hg2Br2 raw powder, Hg2Br2 powder purified under pumping conditions, and Hg2Br2 powder purified under vacuum sealing. Before and after purification, we characterize the powder samples through X-ray diffraction and X-ray photoelectron spectroscopy. The corresponding results indicate that physical properties of the Hg2Br2 compound are not damaged even after the purification process. The impurities and concentration in the purified Hg2Br2 powder are evaluated by inductively coupled plasma-mass spectroscopy. Notably, compared to the sample purified under pumping conditions, the purification process under vacuum sealing results in a higher purity Hg2Br2 (99.999 %). In addition, when the second vacuum sealing purification process is performed, the remaining impurities are almost removed, giving rise to Hg2Br2 with ultra-high purity. This high purification process might be possible due to independent control of impurities and Hg2Br2 materials under the optimized vacuum sealing. Preparation of such a highly purified Hg2Br2 materials will pave a promising way toward a high-quality Hg2Br2 single crystal and then high performance AOTF modules.

4H- and 6H-SiC grown by physical vapor transport method were investigated by transmission electron microscopy (TEM). From the TEM diffraction patterns observed along the [11-20] zone axis, 4H- and 6H-SiC were identified due to their additional diffraction spots, indicating atomic stacking sequences. However, identification was not possible in the [10-10] zone axis due to the absence of additional diffraction spots. Basal plane dislocations (BPDs) were investigated in the TEM specimen prepared along the [10-10] zone axis using the two-beam technique. BPDs were two Shockley partial dislocations with a stacking fault (SF) between them. Shockley partial BPDs arrayed along the [0001] growth direction were observed in the investigated 4H-SiC. This arrayed configuration of Shockley partial BPDs cannot be recognized from the plan view TEM with the [0001] zone axis. The evaluated distances between the two Shockley partial dislocations for the investigated samples were similar to the equilibrium distance, with values of several hundreds of nanometers or even values as large as over a few micrometers.