To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

To improve the chemical stability of metal, the ceramic coatings on metallic materials have attracted interest from many researchers due to the chemical inertness of ceramic materials. To endure strong acids, SiOC coating on metal substrate was carried out by dip coating method using 20wt% polyphenylcarbosilane solution; SiC powder was added to the solution at 10wt% and 15wt% to improve the mechanical properties and to prevent cracks of the film. Thermal oxidation as a curing step was carried out at 200˚C for crosslinking of the polyphenylcarbosilane, and the coating samples were pyrolysized at 800˚C under argon to convert the polyphenylcarbosilane to SiOC film. The thicknesses of the SiOC coating films were 2.36μm and 3.16μm. The quantities of each element were measured as SiO1.07C6.33 by EPMA, and it can be confirmed that the SiOC film from polyphenylcarbosilane was formed in a manner that was carbon rich. The hardness of the SiOC film was found to be 3.2Gpa through nanoindentor measurement. No defect including cracks appeared in the SiOC film. The weight loss of the SiOC coated stainless steel was within 2% after soaking in 10% HCl solution at 80˚C for one week. From these results, SiOC coating shows good potential for application to protect against severe chemical corrosion of stainless steel.

In order to meet the requirements of faster speed and higher packing density for devices in the field ofsemiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection.SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materialsfor Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to theirthermal and mechanical properties, which are superior to those of organic materials such as porous SiO2, SiOF, polyimides,and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method usingtrimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectricconstant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by usingNMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insolublesamples and the chemical shift of 29Si. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Simolecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such asphenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found tobe very efficient as a CVD or PECVD precursor.

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the CH4 concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/SiO2/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with SiH4, CO2 and CH4 gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the CH4 concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-(CH3)2, Si-CH3 and CHx in the absorbance mode over the range from 650 to 4000 cm-1. The results showed that dielectric properties with different CH4 concentrations are closely related to the (Si-CH3)/[(Si-CH3)+(Si-O)] ratio.