To observe the formation of defects at the interface between an oxide semiconductor and SiO2, ZnO was preparedon SiO2 with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on thecharacteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionicinteractions after an annealing process, whereas that of ZnO on SiO2 changed due to the various types of defects which hadformed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defectdeformations at the interface between the ZnO and SiO2, the O 1s electron spectra were convoluted into three sub-peaks bya Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5eV), O2− ions in an oxygen-deficient region (at 531.66eV) and OH bonding (at 532.5eV). In view of the crystallinity from the peak (103) in the XRDpattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum)at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66eV due tothe generation of O2− ions in the oxygen-deficient region formed by thermal activation energy.

LaFeO3 powders were synthesized using a method involving solution combustion, and the surfaceproperties of these powders were examined by x-ray photoelectron spectroscopy. As the amount of fuelincreased during the synthesis, the LaFeO3 powders became amorphous with a large plate-like shape. It wasfound that the O 1s spectra were composed of two types of photoelectrons by deconvolutioning the spectra.Photoelectrons with higher binding energy come from adsorbed oxygen (O−) whereas those with lower energycome from lattice oxygen (O2−). The ratio of adsorbed and lattice oxygen increased as the ratio of the fuel andnitrate (Φ) increased. The binding energy of both types of oxygen increased as Φ increased due to the formationof carbonates.

The effect of cobalt precursor on the structure of Co supported multi-walled carbon nanotubes (MWCNTs) were studied by using X-ray photoelectron spectroscopy (XPS). MWCNTs were treated with a mixture of nitric and sulfuric acids and decorated with cobalt and/or cobalt oxides via aqueous impregnation solutions of cobalt nitrate or cobalt acetate followed by reduction in hydrogen. XPS was mainly used to investigate the phase of cobalt on MWCNTs after reduction with H2 flow at 400℃ for 2 h. Higher cobalt-nanoparticle dispersion was found in the MWCNTS prepared via cobalt nitrate decomposition. A typical XPS spectrum of Co 2p showed the peaks at binding energy (BE) values equal to 781 and 797 eV, respectively. It is found that cobalt nitrate supported MWCNTs is more dispersive and have catalytic activity than that of cobalt acetate supported MWCNTs at same preparation condition such as concentration of precursor solution and reduction environment.

본 연구에서는 비파괴적 분석 기법인 각분해 X-선 광전자 분광기(Angle-Resolved X-ray Photoelectron Spectros-copy)를 이용하여 GaAs 표면 자연 산화막의 깊이에 따른 화학적 결합 상태 및 조성 분석을 수행하였다. GaAs의 벽개면 및 Ar이온으로 식각된 면을 기준시료로 하여 각 원자의 광전자 강도(intensity)를 보정해주는 인자인 ASF(atomic sensitivity factor)의 최적값을 구하였다. 이륙각에 따라 발생되어지는 각 원소의 피이크 분해와 정확한 ASF의 보정을 통한 각 원소의 실험적인 결과를 이용하여 깊이 방향으로의 조성 분포 모델을 세웠으며, 이론적인 강도와의 상호비교로부터 표면 오염층의 구조는 표면으로부터 탄소층, Ga-oxide와 As-oxide로 이루어진 oxides층, As-As결합의 elemental As층 및 GaAs기판의 순으로 존재함을 알 수 있었다. 또한 GaAs 표면에 존재하는 오염층은 35.8±3.3 Å이었다. 또한 위 결과로부터 분석깊이 영역에서 원자수의 비로써 정의되는 의미로서의 실질조성을 구하였는데 단지 특정 이륙각에 따라 일반적인 ASF로 보정된 표면조성 결과는 표면 상태를 명확히 표현해주지 못함을 확인할 수 있었다.