Piezodialysis involves the preferential permeation of ions over water molecules through charge mosaic membranes (CMM). This energy-efficient process incites interest as an alternative route to water desalination. But the development of effective CMMs remains a challenge due to their difficult fabrication. Herein, preparation of the positive and negative domains of a CMM were optimized. Negative poly(sodium styrene sulfonate) was blended in poly(vinyl alcohol) matrix, same as that of the positive poly(diallyldimethyl ammonium chloride). Results reveal that a balance between the two domains is critical for the CMM to achieve high salt enrichment and mechanical stability. This work was supported by NRF funded by the Korea government (MSIP) (No. 2017R1A2B2002109) and Basic Science Research Program of Ministry of Education (2009-0093816).

본 연구에서는 전하 조절층을 이용하여 녹색 인광 유기발광다이오드의 효율의 향상을 나타냈다. 양극성의 4,4,N,N'-dicarbazolebiphenyl (CBP)를 호스트와 전하 조절층으로 사용하여 발광층 내에서 전하의 이동을 원활하게 할 수 있다. 게다가 전하 조절층의 삽입으로 엑시톤을 효과적으로 발광층 내에 제한하여, 삼중항-삼중항 소멸 현상을 억제할 수 있음을 확인하였다. 발광층의 전체 두께는 유지하고, 전하 조절층의 변화를 준 다섯 개의 소자를 제작하여 최적화된 전하 조절층의 두께를 이용한 Device D는 외부 양자 효율 16.22%와 휘도 효율 55.76 cd/A의 성능을 보였다.

고준위폐기물처분장에서 완충재는 오랜 기간 동안 방사성핵종의 붕괴열과 여러가지 화학조건의 지하 수에 노출되며, 이러한 열수조건은 완충재물질의 차수 및 핵종저지 방벽성능에 심각한 영향을 줄 수 있 다. 본 연구에서는 국산 스멕타이트를 대상으로 열수실험을 수행하고, 열수반응에 의한 스멕타이트 점토 의 팽창도, 층전하, 양이온교환능의 변화를 조사하였다. 열수실험 결과, 온도와 용액 중 칼륨농도를 증가 시켰을 때, 스멕타이트의 팽창도는 감소하였고, 층전하는 더 큰 음전하를 가졌으며, 양이온교환능도 감소 하였다.

The Charge Trap Flash (CTF) memory device is a replacement candidate for the NAND Flash device. In this study,Pt/Al2O3/La2O3/SiO2/Si multilayer structures with lanthanum oxide charge trap layers were fabricated for nonvolatile memorydevice applications. Aluminum oxide films were used as blocking oxides for low power consumption in program/erase operationsand reduced charge transports through blocking oxide layers. The thicknesses of SiO2 were from 30Å to 50Å. From the C-Vmeasurement, the largest memory window of 1.3V was obtained in the 40Å tunnel oxide specimen, and the 50Å tunnel oxidespecimen showed the smallest memory window. In the cycling test for reliability, the 30Å tunnel oxide sample showed an abruptmemory window reduction due to a high electric field of 9~10MV/cm through the tunnel oxide while the other samples showedless than a 10% loss of memory window for 104cycles of program/erase operation. The I-V measurement data of the capacitorstructures indicated leakage current values in the order of 10-4A/cm2 at 1V. These values are small enough to be used in non-volatile memory devices, and the sample with tunnel oxide formed at 850oC showed superior memory characteristics comparedto the sample with 750oC tunnel oxide due to higher concentration of trap sites at the interface region originating from the roughinterface.