In this study, TbDyFe thin films with the thickness of 1000 Å are fabricated by DC magnetron sputtering. TbDyFe thin films are prepared by DC magnetron sputtering method. The pressure of Ar gas below 1.33 kPa and DC input power of 200 W are used for the sputtering conditions. During sputtering process the substrate holder is heated up to 150 ℃. The thin films are deposited to a thickness of 1000 Å on polyimide substrate with a thickness of 2 μm. The fabricated microstructures are observed by X-ray diffraction (XRD) and the film thickness is measured. Magnetostrictions are determined from the curvature of the thin films which are measured by the optical cantilever method. The experimental results are discussed with numerical data.

Magnetostrictive thin films can be applied in transmission system for the enhancement of energy efficiency. In this study, four kinds of substrates (Si, glass, Fe, polyimide) with the magnetostrictive thin film layers are prepared and investigated to characterize the magnetic and mechanical behaviors due to the substrates effects. The fabricated substrates have thicknesses of 50, 150 and 500um with cantilever shape. TbDyFe films are deposited by DC magnetron sputtering with 1～10m thick. The deposited film thicknesses are verified using X-ray diffraction. The magnetization of each sample is examined using VSM(Vibrating Sample Magnetometer) and magnetostriction is also measured using capacitance method to characterize magneto-mechanical behaviors. The magnetostriction results as deflections are compared and the results are discussed for micro actuator applications.

Silicon based magnetostrictive structures were fabricated for micro-wireless actuators, and finite element models were developed to predict mechanical characteristics of the actuated structures. These structures can be used to design wireless automotive parts and multi-function packaged micro automotive devices. In the fabrication process, amorphous magnetostrictive films of the optimized binary compound Tb0.4Fe0.6 and Sm0.47Fe0.53 were deposited with various thicknesses on the silicon membrane by DC magnetron sputtering using cast composite targets. Magnetic fields lower than 2KOe (0.2T) were applied for micro-system applications. These films have been tested in a simple cantilever arrangement and the predicted magnetostrictions of the actuated membranes through the developed FE models have been calculated.

asically, a current sensor is consisted of ferromagnetic core, coil and magnetic sensor. To measure alternative current, 2 methods are existed. The first method is measurement of the induced elect개motive force of coil, which is wired in ferromagnetic core. The second measurement method is utilized with the magnetic sensor, such as hall effect sensor. However, those methods have some problem. This paper introduces the development of direct current sensor using magnetostriction. Principally, magnetostriction is the phenomenon of expansion of contraction when ferromagnetic core is placed in an alternating magnetic field. This induced electromagnetic induction and the direct current can be measured such as measurement of alternating current.