Abstract We demonstrate convenient alignment technologies using imprinting lithography with sol-gel process. The aligned nano pattern is fabricated on a silicon wafer by laser interference lithography. For conformal imprinting process, aligned nano pattern was transferred onto the polydimethylsiloxane (PDMS). Using a PDMS sheet with aligned nano pattern, aligned nano pattern was created onto the sol-gel driven hafnium zinc oxide by imprinting lithography. The process was conducted at annealing temperatures of 150 °C. The obtained pattern on the HfZnO film acted as a guide for aligning liquid crystal (LC) molecules. The geometric restriction induced by aligned pattern leads to LC alignment along to the aligned nano pattern. The combination of imprint lithography and solution-processed inorganic materials proved good alternative of LC alignment technique.

In this study, nano-scale copper powders were reduction treated in a hydrogen atmosphere at the relativelyhigh temperature of 350℃ in order to eliminate surface oxide layers, which are the main obstacles for fabricating anano/ultrafine grained bulk parts from the nano-scale powders. The changes in composition and microstructure beforeand after the hydrogen reduction treatment were evaluated by analyzing X-ray diffraction (XRD) line profile patternsusing the convolutional multiple whole profile (CMWP) procedure. In order to confirm the result from the XRD lineprofile analysis, transmitted electron microscope observations were performed on the specimen of the hydrogen reduc-tion treated powders fabricated using a focused ion beam process. A quasi-statically compacted specimen from the nano-scale powders was produced and Vickers micro-hardness was measured to verify the potential of the powders as thebasis for a bulk nano/ultrafine grained material. Although the bonding between particles and the growth in size of theparticles occurred, crystallites retained their nano-scale size evaluated using the XRD results. The hardness results dem-onstrate the usefulness of the powders for a nano/ultrafine grained material, once a good consolidation of powders isachieved.

This work presents a fabrication procedure to make large-area, size-tunable, periodically different shape metal arrays using nanosphere lithography (NSL) combined with ashing and annealing. A polystyrene (PS, 580 μm) monolayer, which was used as a mask, was obtained with a mixed solution of PS in methanol by multi-step spin coating. The mask morphology was changed by oxygen RIE (Reactive Ion Etching) ashing and temperature processing by microwave heating. The Au or Pt deposition resulted in size tunable nano patterns with different morphologies such as hole and dots. These processes allow outstanding control of the size and morphology of the particles. Various sizes of hole patterns were obtained by reducing the size of the PS sphere through the ashing process, and by increasing the size of the PS sphere through annealing treatment, which resulted in tcontrolling the size of the metallic nanoparticles from 30 nm to 230 nm.

Nanofabrication is an essential process throughout industry. Technologies that produce general nanofabrication, such as e-beam lithography, dip-pen lithography, DUV lithography, immersion lithography, and laser interference lithography, have drawbacks including complicated processes, low throughput, and high costs, whereas nano-transfer printing (nTP) is inexpensive, simple, and can produce patterns on non-plane substrates and multilayer structures. In general nTP, the coherency of gold-deposited stamps is strengthened by using SAM treatment on substrates, so the gold patterns are transferred from stamps to substrates. However, it is hard to apply to transfer other metallic materials, and the existing nTP process requires a complicated surface treatment. Therefore, it is necessary to simplify the nTP technology to obtain an easy and simple method for fabricating metal patterns. In this paper, asnTP process with poly vinyl alcohol (PVA) mold was proposed without any chemical treatment. At first, a PVA mold was duplicated from the master mold. Then, a Mo layer, with a thickness of 20 nm, was deposited on the PVA mold. The Mo deposited PVA mold was put on the Si wafer substrate, and nTP process progressed. After the nTP process, the PVA mold was removed using DI water, and transferred Mo nano patterns were characterized by a Scanning electron micrograph (SEM) and Energy Dispersive spectroscopy (EDS).