This study examines the volatilization of alkali elements on the surfaces of ceramic targets and in the deposited films during the deposition of potassium sodium niobate (KNN) thin films using a ceramic target with the nominal composition K0.55Na0.55NbO3 via a RF magnetron sputtering process. Under a 100 W RF power condition, significant volatilization of alkali elements occurred on the surface of the ceramic target, resulting in the inevitable formation of a Nb-rich secondary phase in the thin films. However, perovskite-phase KNN thin films with excellent reproducibility and without secondary phases were obtained under 50 W RF power and a substrate temperature of 600 °C. When the RF power was reduced to 20 W or the substrate temperature was lowered to 500 °C under 50 W RF power, no crystalline thin films could be obtained. Additionally, when the substrate temperature was raised to 700 °C under 50 W RF power, the niobium-rich secondary phase appeared in the thin films due to the volatilization of alkali elements. The conditions of 50 W RF power and a substrate temperature of 600 °C were found to be optimal for depositing perovskite-phase KNN thin films. However, complete suppression of potassium volatilization from the thin films was not achievable. Consequently, the resulting films had a sodium-rich composition compared to K0.5Na0.5NbO3 and exhibited lower dielectric constants along with relaxor ferroelectric characteristics. This study highlights the importance of monitoring the compositional changes in ceramic targets during the RF sputtering process to ensure high reproducibility in KNN thin film fabrication.

Silicon nitride thin films are deposited by RF (13.57 MHz) magnetron sputtering process using a Si (99.999 %) target and with different ratios of Ar/N2 sputtering gas mixture. Corning G type glass is used as substrate. The vacuum atmosphere, RF source power, deposit time and temperature of substrate of the sputtering process are maintained consistently at 2 ~ 3 × 10−3 torr, 30 sccm, 100 watt, 20 min. and room temperature, respectively. Cross sectional views and surface morphology of the deposited thin films are observed by field emission scanning electron microscope, atomic force microscope and X-ray photoelectron spectroscopy. The hardness values are determined by nano-indentation measurement. The thickness of the deposited films is approximately within the range of 88 nm ~ 200 nm. As the amount of N2 gas in the Ar:N2 gas mixture increases, the thickness of the films decreases. AFM observation reveals that film deposited at high Ar:N2 gas ratio and large amount of N2 gas has a very irregular surface morphology, even though it has a low RMS value. The hardness value of the deposited films made with ratio of Ar:N2=9:1 display the highest value. The XPS spectrum indicates that the deposited film is assigned to non-stoichiometric silicon nitride and the transmittance of the glass with deposited SiO2-SixNy thin film is satisfactory at 97 %.

RF-magnetron Sputtering Process를 이용하여 Pt/Ti/Si(100)기판위에 lanthanum-modified lead titanate 박막을 제작하였다. 기판온도와 증착시간이 증가함에 따라 증착율은 감소하였다. 기판온도가 증가함에 따라 fine grain들은 large grain으로 변화하였다. Perovskite구조는 기판온도 540˚C, gas pressure 30mtorr에서 나타나기 시작하였다. 본 실험에서 perovskite 박막제작에 대한 조건은 기판온도 580˚C, gas pressure 30mtorr였다. Pt/Ti/Si(100) 우선 배향된 박막을 얻었다. La양이 증가함에 따라 유전율, 항전계, 잔류분극량은 증가하였다. 중심주파수가 44.7MHz, 전파속도는 2680m/sec를 가지는 SAW filter 특성을 얻었다.