This study developed an integrated performance evaluation framework for rural development Official Development Assistance (ODA) projects in Korea and validated its effectiveness through practical application. Based on the FAO’s SAFA (Sustainability Assessment of Food and Agriculture Systems) Tool, the framework enables a balanced assessment across economic, social, environmental, and governance dimensions. The methodology incorporates the Analytic Hierarchy Process (AHP) and Importance-Performance Analysis (IPA) to measure the importance and performance of objectives and indicators. The developed framework serves as a tool for Project Design Matrix (PDM) development, monitoring, and evaluation throughout the project’s planning, implementation, and completion phases. During planning, it systematically incorporates stakeholder input in setting objectives and indicators. During implementation, it facilitates real-time monitoring for immediate decision-making and resource reallocation. At completion, it supports comprehensive performance evaluation. Application of the framework to the “Rural Development Programme in Tuyen Quang Province, Vietnam” demonstrated its effectiveness in systematizing excessive indicators and clarifying the hierarchical and logical connections between objectives. This performance evaluation framework can enhance project transparency and accountability by overcoming the limitations of current PDM approaches and providing systematic methods for incorporating stakeholder feedback. It is particularly applicable to multi-sectoral rural development programs and is expected to contribute to integrated development in target areas. However, validation through a single case study presents limitations, necessitating future application across diverse regions and project types to verify generalizability.

(100) Si 기판위에 전자 빔 증착법을 이용하여 90Å두께의 Ti과 120Å두께의 Co를 순차적으로 증착시켰다. 그 후 질소분위기하의 350-900˚C온도구간에서 급속열처리함으로써 (100) Si 기판위의 Co/Ti 이중 박막의 실리사이드화 반응이 일어나게 했으며 이를 XRD, AES, TEM을 이용하여 분석하였다. 500˚C이하의 온도에서는 Co원자들이 Ti층쪽으로 빠르게 확산하여 Si와 반응하기 이전에 Ti원자들과 상호 혼합되어 어떠한 실리사이드도 형성되지 않았다. 500˚C에서 열처리된 시편의 고분해능전자현미경 영상을 통해 Co-Ti 혼합층과 실리콘 기판과의 계면에서 (100)Si 기판과 정합관계를 가지는 CoSi2가 형성되었음을 확인했다. 600˚C열처리에 의해 Co-Ti-Sitka성분 실리사이드가 형성되기 시작하였으며, 형성된 삼성분 실리사이드는 Ti의 out-diffusion에 의해 900˚C 이상의 온도에서는 불안정하였다. Co/Ti이중 박막에 의해 형성된 CoSi2는 실리콘 기판과 평탄한 계면을 가지며 실리콘 기판에 대해 (100)우선성장방위를 가졌다.