본 연구의 목적은 폐쇄형 식물생산시스템에서 세가지 혼합 LED와 형광등에서 자란 적치마 상추의 생육과 광 이용효율을 비교하는 것이다. 18일간 육묘한 적치마상추 묘를 적색(R, 655nm), 청색(B, 456nm), 녹색(G, 515nm), 백색(W, 456nm + 558nm)의 혼합 LED(R:B=8:2, R:W:B =8:1:1, R:G:B=8:1:1)와 형광등이 설치된 폐쇄형 식물생산시스템에 정식하였다. 형광등에서 자란 상추는 모든 LED 처리에 비해 유의적으로 높은 엽형지수를 보였다. 지상부와 지하부 생육에서 LED 처리간 유의적 차이를 보이지 않았으나, 모든 LED 처리가 형광등에 비해 약 34% 지상부 생체중의 증가를 유도시켰다. 한편, 정식 후 4주차에 형광등의 총 소비 전력은 145kW인 반면, LED 처리구들에서 형광등의 약 1/3배인 54kW를 나타냈다. LED 처리구들의 건물중에 대비한 광 이용 효율은 약 34mg/W였으며, 이는 형광등 보다 약 3.5배 높은 값이었다. 결론적으로, 본 연구는 식물 생산 시스템에서 적절한 조합의 LED 조사는 형광등에 비해 상추 생장을 증진시킬 수 있으며 추가적으로 에너지 절감을 통해 광 이용효율도 극대화 할 수 있음을 보여주었다.

In this study, we have investigated highly efficient nanoscale surface corrugated light emitting diodes (LEDs) for the enhancement of light extraction efficiency (LEE) of nitride semiconductor LEDs. Nanoscale indium tin oxide (ITO) surface corrugations are fabricated by using the conformal nanoimprint technique; it was possible to observe an enhancement of LEE for the ITO surface corrugated LEDs. By incorporating this novel method, we determined that the total output power of the surface corrugated LEDs were enhanced by 45.6% for patterned sapphire substrate LEDs and by 41.9% for flat c-plane substrate LEDs. The enhancement of LEE through nanoscale surface corrugations was studied using 3-dimensional Finite Different Time Domain (FDTD) calculation. From the FDTD calculations, we were able to separate the light extraction from the top and bottom sides of device. This process revealed that light extraction from the top and bottom sides of a device strongly depends on the substrate and the surface corrugation. We found that enhanced LEE could be understood through the mechanism of enhanced light transmission due to refractive index matching and the increase of light scattering from the corrugated surface. LEE calculations for the encapsulated LEDs devices also revealed that low LEE enhancement is expected after encapsulation due to the reduction of the refractive index contrast.

Ultraviolet (UV) light emitting diodes (LEDs) were grown on a patterned n-type GaN substrate (PNS) with 200 nm silicon-di-oxide (SiO2) nano pattern diameter to improve the light output efficiency of the diodes. Wet etched self assembled indium tin oxide (ITO) nano clusters serve as a dry etching mask for converting the SiO2 layer grown on the n-GaN template into SiO2 nano patterns by inductively coupled plasma etching. PNS is obtained by n-GaN regrowth on the SiO2 nano patterns and UV-LEDs were fabricated using PNS as a template. Two UV-LEDs, a reference LED without PNS and a 200 nm PNS UV-LEDs were fabricated. Scanning Electron microscopy (SEM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Photoluminescence (PL) and Light output intensity- Input current- Voltage (L-I-V) characteristics were used to evaluate the ITO-SiO2 nanopattern surface morphology, threading dislocation propagation, PNS crystalline property, PNS optical property and UVLED device performance respectively. The light out put intensity was enhanced by 1.6times@100mA for the LED grown on PNS compared to the reference LED with out PNS.