Aluminum-oxide(Al2O3) thin films were deposited by electron cyclotron resonance plasma-enhanced atomic layer deposition at room temperature using trimethylaluminum(TMA) as the Al source and O2 plasma as the oxidant. In order to compare our results with those obtained using the conventional thermal ALD method, Al2O3 films were also deposited with TMA and H2O as reactants at 280 oC. The chemical composition and microstructure of the as-deposited Al2O3 films were characterized by X-ray diffraction(XRD), X-ray photo-electric spectroscopy(XPS), atomic force microscopy(AFM) and transmission electron microscopy(TEM). Optical properties of the Al2O3 films were characterized using UV-vis and ellipsometry measurements. Electrical properties were characterized by capacitance-frequency and current-voltage measurements. Using the ECR method, a growth rate of 0.18 nm/cycle was achieved, which is much higher than the growth rate of 0.14 nm/cycle obtained using thermal ALD. Excellent dielectric and insulating properties were demonstrated for both Al2O3 films.

4 mol% Yttria-stabilized zirconia (4YSZ) coatings with 200 μm thick are fabricated by Electron Beam Physical Vapor Deposition (EB-PVD) for thermal barrier coating (TBC). 150 μm of NiCrAlY based bond coat is prepared by conventional APS (Air Plasma Spray) method on the NiCrCoAl alloy substrate before deposition of top coating. 4 mol% YSZ top coating shows typical tetragonal phase and columnar structure due to vapor phase deposition process. The adhesion strength of coating is measured about 40 MPa. There is no delamination or cracking of coatings after thermal cyclic fatigue and shock test at 850oC.

We present the structural, optical, and electrical properties of amorphous silicon suboxide (a-SiOx) films grown on indium tin oxide glass substrates with a radio frequency magnetron technique from a polycrystalline silicon oxide target using ambient Ar. For different substrate-target distances (d = 8 cm and 10 cm), the deposition temperature effects were systematically studied. For d = 8cm, oxygen content in a-SiOx decreased with dissociation of oxygen onto the silicon oxide matrix; temperature increased due to enlargement of kinetic energy. For d = 10 cm, however, the oxygen content had a minimum between 150˚ and 200˚. Using simple optical measurements, we can predict a preferred orientation of liquid crystal molecules on a-SiOx thin film. At higher oxygen content (x > 1.6), liquid crystal molecules on an inorganic liquid crystal alignment layer of a-SiOx showed homogeneous alignment; however, in the lower case (x< 1.6), liquid crystals showed homeotropic alignment.

형광등으로 사용되는 전기 에너지의 40%를 절약할 수 있는 방법으로서 그 반사값을 특수 은 반사박막으로 처리하여 고효율 및 내구성을 갖는 기술이 최근에 알려지고 있다. 이 박막들은 sputtering법을 이용한 것으로 주로 미국에서 생산되어지고 있다. 한편. evaporation 법으로 제작된 은 박막들은 일반적으로 반사효율에는 별문제가 없으나 부착력이 떨어지는 단점이 있다. 우리는 수년간 polyester를 기판으로 하고 몇가지 PVB 방법을 동원하여 고 반사율 및 부착력을 갖는 은경 박막을 확보하기 위해 연구를 해왔다. 그 결과, evaporation 법으로 제작된 은 박막은 96.4%의 반사율을 보이나 부착력은 12 Kg/cm2에 불과함을 확인하였고. sputter 법으로 제작한 시편들의 반사율은 96.3 %로 비슷하였으나 부착력이 /20 Kgcm2로 거의 두배로 뛰어올라 sputter법의 공정조건이 그 결과박막들의 물리적 특성에 미치는 긍정적 영향을 확인할 수 있었다. X-선 회절 분석결과 sputter의 경우에 (111)면이 우선성장함을 알 수 있었고, 시편의 단면으로부터 관찰된 치밀한 columnar 구조가 부착력을 향상시키고 있음이 확인되었다.