Using a customized diffusion bonder, we executed diffusion bonding for ring shaped white gold and red gold samples (inner, outer diameter, and thickness were 15.7, 18.7, and 3.0 mm, respectively) at a temperature of 780 °C and applied pressure of 2300 N in a vacuum of 5 × 10−2 torr for 180 seconds. Optical microscopy, field emission scanning electron microscopy (FE-SEM), and energy-dispersive X-ray spectroscopy (EDS) were used to investigate the microstructure and compositional changes. The mechanical properties were confirmed by Vickers hardness and shear strength tests. Optical microscopy and FE-SEM confirmed the uniform bonding interface, which was without defects such as micro pores. EDS mapping analysis confirmed that each gold alloy was 14K with the intended composition; Ni and Cu was included as coloring metals in the white and red gold alloys, respectively. The effective diffusion coefficient was estimated based on EDS line scanning. Individual values of Ni and Cu were 5.0 × 10−8 cm2/s and 8.9 × 10−8 cm2/s, respectively. These values were as large as those of the melting points due to the accelerated diffusion in this customized diffusion bonder. Vickers hardness results showed that the hardness values of white gold and red gold were 127.83 and 103.04, respectively, due to solid solution strengthening. In addition, the value at the interface indicated no formation of intermetallic compound around the bonding interface. From the shear strength test, the sample was found not to be destroyed at up to 100,000 gf due to the high bonding strength. Therefore, these results confirm the successful diffusion bonding of 14K white-red golds with a diffusion bonder at a low temperature of 780 °C and a short processing time of 180 seconds.

Graphite was diffusion-bonded by hot-pressing to W-25Re alloy using a Ti interlayer. For the joining, a uniaxial pressure of 25 MPa was applied at 1600 oC for 2 hrs in an argon atmosphere with a heating rate of 10 oC min−1. The interfacial microstructure and elemental distribution of the W-25Re/Ti/Graphite joints were analyzed by scanning electron microscopy (SEM). Hot-pressed joints appeared to form a stable interlayer without any micro-cracking, pores, or defects. To investigate the high-temperature stability of the W-25Re/Ti/Graphite joint, an oxy-acetylene torch test was conducted for 30 seconds with oxygen and acetylene at a 1.3:1 ratio. Cross-sectional analysis of the joint was performed to compare the thickness of the oxide layer and its chemical composition. The thickness of W-25Re changed from 250 to 20 μm. In the elemental analysis, a high fraction of rhenium was detected at the surface oxidation layer of W-25Re, while the W-25Re matrix was found to maintain the initial weight ratio. Tungsten was first reacted with oxygen at a torch temperature over 2500 oC to form a tungsten oxide layer on the surface of W-25Re. Then, the remaining rhenium was subsequently reacted with oxygen to form rhenium oxide. The interfacial microstructure of the Ti-containing interlayer was stable after the torch test at a temperature over 2500 oC.

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

Co/Ti 이중막을 급속열처리하여 형성한 CoSi2에 As+을 이온주입한 후, 500~1000˚C에서 drive-in 열처리하여 매우얇은 n+ p접합의 다이오드를 제작하고 I-V 특성을 측정하였다. 500˚C에서 280초 drive-in 열처리하였을 때, 50nm정도의 매우 얇은접합이 형성되었고, 누설전류가 매우 낮아 가장 우수한 다이오드 특성을 나타내었다. 특히, Co 단일막을 사용한 다이오드에 비해 누설전류는 2order 이상 낮았으며, 이는 CoSi2Si의 계면이 균일하였기 때문이다.

TLP(Transient-Liquid-Phase) bonding of Fe-base MA956 ODS alloy was performed. As insert metal a commercially available Ni-base alloy(MBF50) and an MA956 alloy with additive elements of 7wt% Si and 1wt% B were used. To confirm the idea that a concurrent use of MA956 powder with Insert metals can enhance the homogenization of constituent elements and thereby reduce the thickness of joint interface, MA956 powder was also inserted In a form of sheet. SEM observation and EDS analysis revealed that Cr-rich phase was formed in the bonded interface in initial stage of isothermal solidification during the bonding process, irrespective of kind of insert metals. Measurement of hardeness in the region of bonded interface and EDS analysis showed that a complete homogenization of composition could not be obtained especially in case of MBF50. Joints using either BSi insert metals only or BSi insert together with MA956 powder interlayer showed, however, a remarkable improvement in a compositional homogenization, even though a rapid grain growth in the bonded interface could not be hindered.