Hydroxyl radical (OH radical) is the most harmful free radical amongst the Reactive Oxygen Species (ROS) responsible for numerous diseases of DNA damage like mutagenesis, carcinogenesis and ageing. Therefore, it is important to find a suitable scavenger for OH radical. In the present contribution, we aim to investigate the ability of pristine armchair-SWCNT and B/N/P-doped armchair-SWCNT to scavenge OH radicals using DFT calculations. The calculations reveal that the B/Pdoped armchair-SWCNTs can act as a better scavenger for OH radical compared to pristine armchair-SWCNT but N-doped armchair-SWCNT does not act as a better scavenger for OH radical compared to pristine armchair-SWCNT. Furthermore, the developed scavenger is examined in terms of large-scale availability, biocompatibility, conductivity, stability and reactivity. For both in vivo and in vitro studies, the work is found to useful for enhancing SWCNT as a free radical scavenger.

Extensive research is being carried out on Ni-rich Li(NixCoyMn1-x-y)O2 (NCM) due to the growing demand for electric vehicles and reduced cost. In particular, Ni-rich Li(NixCoyMn1-x-y-zAlz)O2 (NCMA) is attracting great attention as a promising candidate for the rapid development of Co-free but electrochemically more stable cathodes. Al, an inactive element in the structure, helps to improve structural stability and is also used as a doping element to improve cycle capability in Ni-rich NCM. In this study, NCMA was successfully synthesized with the desired composition by direct coprecipitation. Boron and tin were also used as dopants to improve the battery performance. Macro- and microstructures in the cathodes were examined by microscopy and X-ray diffraction. While Sn was not successfully doped into NCMA, boron could be doped into NCMA, leading to changes in its physicochemical properties. NCMA doped with boron revealed substantially improved electrochemical properties in terms of capacity retention and rate capability compared to the undoped NCMA.

A simple, but effective means of tailoring the physical and chemical properties of carbon materials should be secured. In this sense, chemical doping by incorporating boron or nitrogen into carbon materials has been examined as a powerful tool which provides distinctive advantages over exohedral doping. In this paper, we review recent results pertaining methods by which to introduce boron atoms into the sp2 carbon lattice by means of high-temperature thermal diffusion, the properties induced by boron doping, and promising applications of this type of doping. We envisage that intrinsic boron doping will accelerate both scientific and industrial developments in the area of carbon science and technology in the future.