The present paper describes the effect of co-catalyst on the growth of multiwall carbon nanotube (MWCNT) by chemical vapor deposition (CVD) technique. The fascinating properties of CNT make them a suitable material for optoelectronic devices such as sensors, LED, solar cell, and field emission displays. MWCNTs were fabricated using CVD, by decomposing ethanol over finely dispersed Co metal as a catalyst at 750 °C. The effects of growth condition on the quality and morphology of MWCNTs were investigated by SEM, FTIR and XRD. SEM photographs show that the nanotubes are densely packed having a diameter of 10–15 nm. The bandgap was calculated by UV–visible spectroscopy and it was found varying from 3.08 to 3.5 eV by changing the substrates. The average size of tubes (length) was found to be 250 nm. FTIR exhibited that the synthesized MWCNTs were semiconducting in nature with the oxygen vacancies causing the variations in refractive index with the exposure of moisture.

In this study, modified catalytic chemical vapor deposition (CCVD) method was applied to control the CNTs (carbon nanotubes) growth. Since titanium (Ti) substrate and iron (Fe) catalysts react one another and form a new phase (Fe2TiO5) above 700℃, the decrease of CNT yield above 800℃ where methane gas decomposes is inevitable under common CCVD method. Therefore, we synthesized CNTs on the Ti substrate by dividing the tube furnace into two sections (left and right) and heating them to different temperatures each. The reactant gas flew through from the end of the right tube furnace while the Ti substrate was placed in the center of the left tube furnace. When the CNT growth temperature was set 700/950℃ (left/right), CNTs with high yield were observed. Also, by examining the micro-structure of CNTs of 700/950℃, it was confirmed that CNTs show the bamboo-like structure.

Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in H2 (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without H2 showed an intensity ratio of IG/I2D = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in H2 ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and 700˚C. The graphene films grown on 260-nm thick Ni films at 900˚C showed the lowest IG/I2D ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at 700˚C for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.

The carbon nanofibers (CNFs) were synthesized through the catalytic decomposition of hydrocarbons in a quartz tube reactor. The CNFs prepared from C3H8 at 550℃ was selected as the purification sample due to the higher content of impurity than that prepared from other conditions. In this study, we carried out the purification of CNFs by oxidation in air or carbon dioxide after acid treatment, and investigated the influence of purification parameters such as kind of acid, concentration, oxidation time, and oxidation temperature on the structure of CNFs. The metal catalysts could be easily eliminated from the prepared CNFs by liquid phase purification with various acids and it was verified by ICP analysis, in which, for example, Ni content decreased from 2.51% to 0.18% with 8% nitric acid. However, the particulate carbon and heterogeneous fibers were not removed from the prepared CNFs by thermal oxidation in air and carbon dioxide. This result can be explained by that the direction of graphene sheet in CNFs is vertical to the fiber axis and the CNFs are oxidized at about the similar rate with the impurity carbon.