ZTO/n-Si thin film is produced to investigate tunneling phenomena by interface characteristics by the depletion layer. For diversity of the depletion layer, the thin film of ZTO is heat treated after deposition, and the gpolarization is found to change depending on the heat treatment temperature and capacitance. The higher the heat treatment temperature is, the higher the capacitance is, because more charges are formed, the highest at 150 °C. The capacitance decreases at 200 °C. ZTO heat treated at 150 °C shows tunneling phenomena, with low non-resistance and reduced charge concentration. When the carrier concentration is low and the resistance is low, the depletion layer has an increased potential barrier, which results in a tunneling phenomenon, which results in an increase in current. However, the ZTO thin film with high charge or high resistance shows a Schottky junction feature. The reason for the great capacitance increase is the increased current due to tunneling in the depletion layer.

이 논문은 glass기판에 Insb를 진공증착시킨 Insb박막 자기 sensor에 대하여 연구한 것으로 Hall 효과를 이용하여 자계 및 온도에 대한 Hall전압의 의존성을 조사하엿다. 일정전류구동에서 자계데 대한 Hall전압의 변화는 거의 직선적이었으나 정전압구동에서는 직선성에서 벗어나는 것을 보였다. 주위 온도가 증가함에 따라 Hall 전압이 감소하였으며 InSb 증착막을 자기 sensor로 사용하는 경우, 온도 특성을 고려할 필요가 있다.