Recently, as the demand for a non-contact liquid crystal alignment method capable of improving viewing angle characteristics has spread throughout the industry, various non-contact liquid crystal alignment methods, including conventional UV light alignment, are being actively studied. In the case of UV light alignment, it is currently applied to mass production in many fields and shows relatively excellent initial characteristics, but there is a problem of display quality deterioration over time. In this study, among these non-contact liquid crystal alignment methods, the liquid crystal is oriented by quantitatively irradiating an ion beam onto the SiOF inorganic film, which has excellent initial characteristics and does not cause deterioration in quality over time., the electro-optical properties were evaluated by manufacturing a commercial-level IPS (In-Plane Switching) liquid crystal cell. In particular, in the case of such inorganic film orientation, it is common to have many problems with orientation stability, but the evaluation cell manufactured by the method proposed in this study is capable of maintaining a uniform orientation without losing orientation even after heat treatment at a high temperature of 200°C. could be observed.

Graphene has been synthesized on 100- and 300-nm-thick Ni/SiO2/Si substrates with CH4 gas (1 SCCM) diluted in mixed gases of 10% H2 and 90% Ar (99 SCCM) at 900˚C by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on SiO2/Si substrate after heat treatment at 900˚C for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/SiO2/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/SiO2/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/SiO2/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and 47cm-1, respectively. The several-layer graphene showed a low sheet resistance value of 718Ω/sq and a high light transmittance of 87% at 550 nm.

Graphene has been effectively synthesized on Ni/SiO2/Si substrates with CH4 (1 SCCM) diluted in Ar/H2(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 ˚C, although CH4 and Ar/H2 gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm-1, respectively. With increase of growth temperature to 900 ˚C, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 ˚C on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.

ECR-PECVD법을 사용하여 450-490˚C이하의 온도에서 Pt/SiO2/Si기판 위에 PZT 박막을 증착하였다. 기판 온도가 460˚C 이하일 경우에는 페로브스이트 상과 제2상으로 이루어진 박막이 성장하였으며 기판온도가 470˚C이상일 때에는 페로브스카이트 단일상의 PZT 박막이 성장하였다. 490˚C에서 매우 얇은 페로브스카이트의 PZT 박막을 증착한 후 650˚C에서 1분간 raped thermal annealing(RTA) 처리한 결과 박막의 조성과 결정성에는 거의 변화가 없었으나 박막의 전하 저장 밀도는 크게 향상되었다. 이는 RTA 처리에 의한 저유전 계면층의 소멸이 주된 이유라고 판단된다. 열처리 후 두께 40-45nm의 PZT박막은 200kV/cm의 전장 하에서 10-6cm2이하의 누설전류값을 갖고 있었으며, 인가전압 1V에서 300fF/μm2의 정전용량, 즉 SiO2환산두께 0.12nm를 나타내었다.