광전기화학 성능을 향상시키기 위해 각 ZnO, ZnSe과 g-C3N4 소재의 장점을 살리도록 3성분계 적층 구조를 디자 인했다. 용액공정으로 FTO 기판위에서 ZnO 나노로드 어레이가 성장하도록 한 후 ZnO표면에 Se을 부착시켜 ZnO표면에 서 ZnSe층이 형성 되도록 이온 치환법을 도입하였다. ZnO/ZnSe 나노로드 위에 g-C3N4 층을 스핀코팅 한 후 각 층이 화 학적 접합이 되도록 질소 분위기 하에서 열처리를 하였다. AM 1.5G, 0.5 V 외부전압하에서 각 적층구조별로 광전기화학 적 전류밀도를 측정하였고 비교 결과 ZnO/ZnSe/g-C3N4 나노로드가 ZnO 및 ZnO/ZnSe 나노로드에 비하여 보다 높은 광 전류 밀도가 측정되었다. 수직 정렬된 ZnO 육각 프리즘형태는 큰 비표면적과 축 방향을 따라 전자 흐름을 원활히 하고, ZnSe 층은 비표면적과 광흡수 범위를 더욱 넗히는 효과를 가져왔다. 이로 인하여 ZnO/ZnSe/g-C3N4 삼원 접합 전극의 향상된 성능은 가시광선 흡수범위 확장, 전하 분리 강화 및 전자 전도도 향상으로 인한 시너지 효과에 기인되는 것으로 판단된다.

Nitrogen-doped ZnO nanoparticle-carbon nanofiber composites were prepared using electrospinning. As the relative amounts of N-doped ZnO nanoparticles in the composites were controlled to levels of 3.4, 9.6, and 13.8 wt%, the morphological, structural, and chemical properties of the composites were characterized by means of field-emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). In particular, the carbon nanofiber composites containing 13.8 wt% N-doped ZnO nanoparticles exhibited superior catalytic properties, making them suitable for use as counter electrodes in dye-sensitized solar cells (DSSCs). This result can be attributed to the enhanced surface roughness of the composites, which offers sites for I3- ion reductions and the formation of Zn3N2 phases that facilitate electron transfer. Therefore, DSSCs fabricated with 13.8 wt% N-doped ZnO nanoparticle-carbon nanofiber composites showed high current density (16.3mA/cm2), high fill factor (57.8%), and excellent power-conversion efficiency (6.69%); at the same time, these DSSCs displayed power-conversion efficiency almost identical to that of DSSCs fabricated with a pure Pt counter electrode (6.57%).

We have investigated the structural and electrical properties of Ga-doped ZnO (GZO) thin films deposited by anRF magnetron sputtering at various RF powers from 50 to 90W. All the GZO thin films are grown as a hexagonal wurtzitephase with highly c-axis preferred parameters. The structural and electrical properties are strongly related to the RF power. Thegrain size increases as the RF power increases since the columnar growth of GZO thin film is enhanced at an elevated RFpower. This result means that the crystallinity of GZO is improved as the RF power increases. The resistivity of GZO rapidlydecreases as the RF power increases up to 70W and saturates to 90W. In contrast, the electron concentration of GZO increasesas the RF power increases up to 70W and saturates to 90W. GZO thin film shows the lowest resistivity of 2.2×10−4Ωcmand the highest electron concentration of 1.7×1021cm−3 at 90W. The mobility of GZO increases as the RF power increasessince the grain boundary scattering decreases due to the reduced density of the grain boundary at a high RF power. Thetransmittance of GZO thin films in the visible range is above 90%. GZO is a feasible transparent electrode for application asa transparent electrode for thin film solar cells.

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RFmagnetron sputtering at various deposition temperatures from 100 to 500oC. All the GZO thin films are grown as a hexagonalwurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to depositiontemperature. The grain size increases with the increasing deposition temperature up to 400oC and then decreases at 500oC. Thedependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivityof GZO thin film decreases with the increasing deposition temperature up to 300oC and then decreases up to 500oC. GZO thinfilm shows the lowest resistivity of 4.3×10−4Ωcm and highest electron concentration of 1.0×1021cm−3 at 300oC. The mobilityof GZO thin films increases with the increasing deposition temperature up to 400oC and then decreases at 500oC. GZO thinfilm shows the highest resistivity of 14.1cm2/Vs. The transmittance of GZO thin films in the visible range is above 87% atall the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thinfilm solar cells.

Changes in the surface morphology and light scattering of textured Al doped ZnO thin films on glasssubstrates prepared by rf magnetron sputtering were investigated. As-deposited ZnO:Al films show a hightransmittance of above 80% in the visible range and a low electrical resistivity of 4.5×10-4Ω·cm. The surfacemorphology of textured ZnO:Al films are closely dependent on the deposition parameters of heater temperature,working pressure, and etching time in the etching process. The optimized surface morphology with a cratershape is obtained at a heater temperature of 350oC, working pressure of 0.5 mtorr, and etching time of 45seconds. The optical properties of light transmittance, haze, and angular distribution function (ADF) aresignificantly affected by the resulting surface morphologies of textured films. The film surfaces, havinguniformly size-distributed craters, represent good light scattering properties of high haze and ADF values.Compared with commercial Asahi U (SnO2:F) substrates, the suitability of textured ZnO:Al films as frontelectrode material for amorphous silicon thin film solar cells is also estimated with respect to electrical andoptical properties.

This study investigates Bi2O3-B2O3-BaO-ZnO glass with variations of the Co3O4 content (0.25,0.5,1,and 2wt%) and the interaction between transparent dielectric and Ag electrodes heat-treated at 500-560oC for30min. The glass transition temperature, softening temperature and thermal expansion coefficient were432oC, 460oC and 81.4×10-7/oC, respectively. The transmittance of 0.25wt% Co3O4 to which dielectric wasadded was highest and was decreased due to coloration with the addition of more than 0.25wt%. However,without Co3O4, the transmittance of the transparent layer was decreased due to the formation of Ba5Bi3;however, the occurrence of the crystal phase decreased as a result of the addition of Co3O4. The amount ofCo2+ ions increased as the Co3O4 increased. With a maximum of Co3+ ions, the highest transmittance wasobserved.